Comparison between double exposure with two laser beams interference and single exposure with four laser beams

[in Chinese]; [in Chinese]; [in Chinese]

Journals >Opto-Electronic Engineering >Volume 32 >Issue 12 >Page 21 > Article

Opto-Electronic Engineering
Vol. 32, Issue 12, 21 (2005)

Comparison between double exposure with two laser beams interference and single exposure with four laser beams

[in Chinese]^1、2, [in Chinese]¹, and [in Chinese]²

Author Affiliations

¹[in Chinese]

²[in Chinese]

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese]. Comparison between double exposure with two laser beams interference and single exposure with four laser beams[J]. Opto-Electronic Engineering, 2005, 32(12): 21 Copy Citation Text

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References

[1] Carl O.BOZLER,Christopher T.HARRIS,Steven RABE,et al.Arrays of gated field-emitter cones having 0.32μm tip-to tip spacing[J].Journal of Vacuum Science & Technology B:Microelectronics and Nanometer Structures,1994,12(2):629-632.

[2] J.P.SPALLAS,R.D.BOYD,J.A.BRITTEN,et al.Fabrication of sub-0.5μm diameter cobalt dots on silicon substrates and photoresist pedestals on 50cm×50cm glass substrates using laser interference lithography[J].Journal of Vacuum Science & Technology B:Microelectronics and Nanometer Structures,1996,14(3):2005-2007.

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