Infrared Indium Oxide Hf-doped Transparent Conductive Films

Feng TIAN; Ran BI; Wen-yuan ZHAO; Feng-bo HAN; Ya-dan LI; Chuan-tao ZHENG; Yi-ding WANG

doi:10.3788/gzxb20204909.0931001

Journals >Acta Photonica Sinica >Volume 49 >Issue 9 >Page 0931001 > Article

Acta Photonica Sinica
Vol. 49, Issue 9, 0931001 (2020)

Infrared Indium Oxide Hf-doped Transparent Conductive Films

Feng TIAN, Ran BI, Wen-yuan ZHAO, Feng-bo HAN, Ya-dan LI, Chuan-tao ZHENG, and Yi-ding WANG^*

Author Affiliations

State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China

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DOI: 10.3788/gzxb20204909.0931001 Cite this Article

Feng TIAN, Ran BI, Wen-yuan ZHAO, Feng-bo HAN, Ya-dan LI, Chuan-tao ZHENG, Yi-ding WANG. Infrared Indium Oxide Hf-doped Transparent Conductive Films[J]. Acta Photonica Sinica, 2020, 49(9): 0931001 Copy Citation Text

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Fig. 1. XRD, SEM and XPS analysis of IHfO thin films

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Fig. 2. IHfO FTIR at different annealing temperatures

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Fig. 3. IHfO FTIR at different thicknesses

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Fig. 4. Electricity analysis of IHfO film

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	2θ/(°)	FWHM/(°)	d/nm	D/nm
100℃	30.43	0.412	0.029 4	19.775
200℃	30.52	0.315	0.029 3	25.871
300℃	30.73	0.298	0.029 1	27.361
350℃	30.84	0.261	0.0290	31.250

Table 1. Crystal parameters at different annealing temperatures

Feng TIAN, Ran BI, Wen-yuan ZHAO, Feng-bo HAN, Ya-dan LI, Chuan-tao ZHENG, Yi-ding WANG. Infrared Indium Oxide Hf-doped Transparent Conductive Films[J]. Acta Photonica Sinica, 2020, 49(9): 0931001

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