Diode pumped AO Q-switched 1.34 μm Nd:GdVO4 laser

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Infrared and Laser Engineering >Volume 36 >Issue 2 >Page 179 > Article

Infrared and Laser Engineering
Vol. 36, Issue 2, 179 (2007)

Diode pumped AO Q-switched 1.34 μm Nd:GdVO4 laser

[in Chinese]^1、2、*, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, and [in Chinese]¹

Author Affiliations

¹[in Chinese]

²[in Chinese]

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Diode pumped AO Q-switched 1.34 μm Nd:GdVO4 laser[J]. Infrared and Laser Engineering, 2007, 36(2): 179 Copy Citation Text

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References

[1] YIN Z,SHEN D Y,Ueda Ken-Ichi.A laser-diode pumped Nd:GdVO4 laser[J].Acta Photonica Sinica,2000,20(10):1374-1377.

[2] SUN Y M,HOU X Y,Li Y F.LD-pumped A-O Q-switched Nd:GdVO4 Laser with High Repetition Rates[J].Acta Photonica Sinica,2004,33(6):645-647.

[3] PAN L,HOU X Y,LI Y F,et al.Performance of Xenon-Lamp Pumped Nd:GdVO4 Pulse Laser[J].Chinese Journal of Lasers,2004,31(3):262-264.

[4] GE W W,ZHANG H J,WANG J Y,et al.Pulsed laser output of LD-end-pumped 1.34μm Nd:GdVO4 laser Co:LaMgAl11O19 crystal as saturable absorber[J].Optical Express,2005,13(10):3883-3889.

[7] WALTER Koechner.Solid-State Laser Engineering[M].5th ed.Berlin:Springer-Verlag,1999:92-93.

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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Diode pumped AO Q-switched 1.34 μm Nd:GdVO4 laser[J]. Infrared and Laser Engineering, 2007, 36(2): 179

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