• Semiconductor Optoelectronics
  • Vol. 45, Issue 6, 904 (2024)
WANG Pengjie1, ZHANG Rengang1, ZHANG Chao1, ZHANG Peng2..., CAO Xingzhong2 and WANG Baoyi2|Show fewer author(s)
Author Affiliations
  • 1Hubei Province Key Laboratory of Systems Science in Metallurgical Process, Wuhan University of Science and Technology, Wuhan 430081, CHN
  • 2Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, CHN
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    DOI: 10.16818/j.issn1001-5868.2024082401 Cite this Article
    WANG Pengjie, ZHANG Rengang, ZHANG Chao, ZHANG Peng, CAO Xingzhong, WANG Baoyi. Effect of High-temperature Annealing on the Properties of ZnS Thin Films Grown by Low-temperature Sulfurization[J]. Semiconductor Optoelectronics, 2024, 45(6): 904 Copy Citation Text show less
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    [2] Lu F, Cai W P, Zhang Y G, et al. Fabrication and field-emission performance of zinc sulfide nanobelt arrays [J]. Journal of Physical Chemistry C, 2007, 111(36): 13385-13392.

    [4] Nakada T, Mizutani M. 18% efficiency Cd-free Cu(In,Ga)Se2 thin-film solar cells fabricated using chemical bath deposition (CBD)-ZnS buffer layers [J]. Japanese Journal of Applied Physics, 2002, 41: L165-L167.

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    [8] Wang Y K, Fan J T, Su H, et al. The determining role of stacking fault in the mechanoluminescence properties of ZnS∶Mn thin films [J]. Applied Surface Science, 2024, 656: 159583.

    [9] Balakarthikeyan R, Santhanam A, Vinoth S, et al. Enhancing the optoelectronic properties of low-cost nebulizer spray pyrolysis (NSP) prepared ZnS thin film through praseodymium doping for photodetector applications [J]. Materials Science and Engineering B, 2023, 289: 116213.

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    [18] Shan R, Yi J, Zhong J X, et al. Effect of sulphur pressure on properties of ZnS thin flm prepared by chemical bath deposition technique [J]. Journal of Materials Science: Materials in Electronics, 2019, 30: 13230-13237.

    WANG Pengjie, ZHANG Rengang, ZHANG Chao, ZHANG Peng, CAO Xingzhong, WANG Baoyi. Effect of High-temperature Annealing on the Properties of ZnS Thin Films Grown by Low-temperature Sulfurization[J]. Semiconductor Optoelectronics, 2024, 45(6): 904
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