Zn thin films were deposited on quartz glass substrates using the magnetron sputtering method, whereby ZnS thin films were formed via low-temperature sulfurization annealing. Finally, annealing of ZnS films was conducted at high temperatures of 500~800 ℃ in an argon atmosphere for 1 hour. The effect of annealing temperature on the properties of the ZnS films thus obtained was investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray spectrocscopy (EDS), and ultraviolet (UV) visible spectrophotometer. The results show that the ZnS thin film prepared by low-temperature sulfurization has a hexagonal structure. After high-temperature annealing, the grain size on ZnS films increased, and their transmittance in the visible light range was approximately 80% within bandgaps of 3.59~3.63 eV. With further increases in annealing temperature, the grain size of ZnS thin films increased from 20 nm to 28 nm, the S/Zn atomic ratio decreased, and the surface morphology also changed. Sulfur impurities appeared in the ZnS films after high-temperature annealing at temperatures ≥600 ℃. The optimal high-temperature annealing temperature was 500 ℃, and the resulting ZnS film exhibited good film quality.