[1] E AYYILDIZ, H CETIN, Z J HORVÁTH. Temperature dependent electrical characteristics of Sn/p-Si Schottky diodes. Applied Surface Science, 252, 1153-1158(2005).

[2] Z ÇALDIRAN, A R DENIZ, F MEHMET COŞKUN et al. I-V-T (current-voltage-temperature) characteristics of the Au/Anthraquinone/p-Si/Al junction device. Journal of Alloys and Compounds, 584, 652-657(2014).

[3] Chen WU, Xudong FANG, Feng LIU et al. High speed and low roughness micromachining of silicon carbide by plasma etching aided femtosecond laser processing. Ceramics International, 46, 17896-17902(2020).

[4] R G AZEVEDO, D G JONES, A V JOG et al. A SiC MEMS resonant strain sensor for harsh environment applications. IEEE Sensors Journal, 7, 568-576(2007).

[5] S NAKAO, T ANDO, M SHIKIDA et al. Mechanical properties of a micron-sized SCS film in a high-temperature environment. Journal of Micromechanics and Microengineering, 16, 715-720(2006).

[6] J RABIER, P O RENAULT, D EYIDI et al. Plastic deformation of silicon between 20 ℃ and 425 ℃. Physica Status Solidi C, 4, 3110-3114(2007).

[7] J REN, M WARD, P KINNELL et al. Plastic deformation of micromachined silicon diaphragms with a sealed cavity at high temperatures. Sensors, 16, 204(2016).

[8] T NGUYEN, H PHAN, T DINH et al. Highly sensitive 4H-SiC pressure sensor at cryogenic and elevated temperatures. Materials & Design, 156, 441-445(2018).

[9] Yunbo SHI, Yanan SUN, Jun LIU et al. UV nanosecond laser machining and characterization for SiC MEMS sensor application. Sensors and Actuators A: Physical, 276, 196-204(2018).

[10] L M MIDDELBURG, H W van ZEIJL, S VOLLEBREGT et al. Toward a self-sensing piezoresistive pressure sensor for all-SiC monolithic integration. IEEE Sensors Journal, 20, 11265-11274(2020).

[11] Bo GAO, Wenjie ZHAI, Quan ZHAI et al. Electro-chemical mechanical polishing of 4H-SiC for scratch-free surfaces with less oxide layer at high efficiency. ECS Journal of Solid State Science and Technology, 8, 677-684(2019).

[12] Gaopan CHEN, Jiangguo LI, Haimei LUO et al. One-step fabrication of fine surfaces via femtosecond laser on sliced SiC. Materials Science in Semiconductor Processing, 132, 105926(2021).

[13] A A OSIPOV, G A IANKEVICH, A B SPESHILOVA et al. High-temperature etching of SiC in SF6/O2 inductively coupled plasma. Scientific Reports, 10, 19977(2020).

[14] Dejin ZHUANG, J H EDGAR. Wet etching of GaN, AlN, and SiC: a review. Materials Science and Engineering: R: Reports, 48, 1-46(2005).

[15] Xinfang LIU, Guoguo YAN, Ling SANG et al. Defect appearance on 4H-SiC homoepitaxial layers via molten KOH etching. Journal of Crystal Growth, 531, 125359(2020).

[16] Yi ZHANG, Hongyingnan CHEN, Dianzi LIU et al. High efficient polishing of sliced 4H-SiC (0001) by molten KOH etching. Applied Surface Science, 525, 146532(2020).

[17] L E LUNA, M J TADJER, T J ANDERSON et al. Deep reactive ion etching of 4H-SiC via cyclic SF6/O2 segments. Journal of Micromechanics and Microengineering, 27, 95004(2017).

[18] Hokun SUNG, Tian QIANG, Zhao YAO et al. Vertical and bevel-structured SiC etching techniques incorporating different gas mixture plasmas for various microelectronic applications. Scientific Reports, 7, 3915(2017).

[19] K M DOWLING, E H RANSOM, D G SENESKY. Profile evolution of high aspect ratio silicon carbide trenches by inductive coupled plasma etching. Journal of Microelectromechanical Systems, 26, 135-142(2017).

[20] M HUFF, M PEDERSEN. Electrical field-induced faceting of etched features using plasma etching of fused silica. Journal of Applied Physics, 122, 23302(2017).

[21] Weinan LI, Ruoheng ZHANG, Yongsheng LIU et al. Effect of different parameters on machining of SiC/SiC composites via pico-second laser. Applied Surface Science, 364, 378-387(2016).

[22] B RETHFELD, K SOKOLOWSKI-TINTEN, D von der LINDE et al. Timescales in the response of materials to femtosecond laser excitation. Applied Physics A, 79, 767-769(2004).

[23] Lukang WANG, You ZHAO, Zixuan YANG et al. Femtosecond laser micromachining in combination with ICP etching for 4H-SiC pressure sensor membranes. Ceramics International, 47, 6397-6408(2021).

[24] Xiaozhu XIE, Qingfa PENG, Gaopan CHEN et al. Femtosecond laser modification of silicon carbide substrates and its influence on CMP process. Ceramics International, 47, 13322-13330(2021).

[25] T TOMITA, K KINOSHITA, S MATSUO et al. Distinct fine and coarse ripples on 4H-SiC single crystal induced by femtosecond laser irradiation. Japanese Journal of Applied Physics, 45, 444-446(2006).

[26] T OKADA, H KAWAHARA, Y ISHIDA et al. Cross-sectional TEM analysis of laser-induced ripple structures on the 4H-SiC single-crystal surface. Applied Physics A, 92, 665-668(2008).

[27] M YAMAGUCHI, S UENO, R KUMAI et al. Raman spectroscopic study of femtosecond laser-induced phase transformation associated with ripple formation on single-crystal SiC. Applied Physics A, 99, 23-27(2010).

[28] T TOMITA, T OKADA, H KAWAHARA et al. Microscopic analysis of carbon phases induced by femtosecond laser irradiation on single-crystal SiC. Applied Physics A, 100, 113-117(2010).

[29] O VARLAMOVA, J REIF, S VARLAMOV et al. The laser polarization as control parameter in the formation of laser-induced periodic surface structures: Comparison of numerical and experimental results. Applied Surface Science, 257, 5465-5469(2011).

[30] B PECHOLT, M VENDAN, Yuanyuan DONG et al. Ultrafast laser micromachining of 3C-SiC thin films for MEMS device fabrication. The International Journal of Advanced Manufacturing Technology, 39, 239-250(2008).

[31] Yuanyuan DONG, R NAIR, R MOLIAN et al. Femtosecond-pulsed laser micromachining of a 4H-SiC wafer for MEMS pressure sensor diaphragms and via holes. Journal of Micromechanics and Microengineering, 18, 35022(2008).

[32] You ZHAO, Yulong ZHAO, Lukang WANG. Application of femtosecond laser micromachining in silicon carbide deep etching for fabricating sensitive diaphragm of high temperature pressure sensor. Sensors and Actuators A: Physical, 309, 112017(2020).

[33] Dahua YE. Analysis of characteristics of Gaussian beam and its application. Laser Technology, 43, 142-146(2019).