• Acta Photonica Sinica
  • Vol. 52, Issue 1, 0114004 (2023)
Zehong WAN1, Hongyang DENG1, Yu LEI2, Guoyi TAO1, Hongpo HU3、*, and Shengjun ZHOU1、2、**
Author Affiliations
  • 1The Institute of Technological Sciences,Wuhan University,Wuhan 430072,China
  • 2School of Power and Mechanical Engineering,Wuhan University,Wuhan 430072,China
  • 3School of Automotive Engineering,Guangdong Polytechnic of Science and Technology,Zhuhai 519090,China
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    DOI: 10.3788/gzxb20235201.0114004 Cite this Article
    Zehong WAN, Hongyang DENG, Yu LEI, Guoyi TAO, Hongpo HU, Shengjun ZHOU. Low-damage Micromachining for 4H-SiC Pressure Sensitive Diaphragm by Femtosecond Laser[J]. Acta Photonica Sinica, 2023, 52(1): 0114004 Copy Citation Text show less
    Schematic illustration of the femtosecond laser micromachining system
    Fig. 1. Schematic illustration of the femtosecond laser micromachining system
    Schematic illustration of femtosecond laser processing for 4H-SiC sensitive diaphragm
    Fig. 2. Schematic illustration of femtosecond laser processing for 4H-SiC sensitive diaphragm
    Schematic illustration of the profile and light intensity distribution of a Gaussian beam
    Fig. 3. Schematic illustration of the profile and light intensity distribution of a Gaussian beam
    Energy distribution of the femtosecond laser
    Fig. 4. Energy distribution of the femtosecond laser
    SEM images of 4H-SiC processed by femtosecond laser for single-line scanning
    Fig. 5. SEM images of 4H-SiC processed by femtosecond laser for single-line scanning
    SEM images of 4H-SiC with different number of processing laps or ∆H
    Fig. 6. SEM images of 4H-SiC with different number of processing laps or ∆H
    Schematic illustration of the superposition of light intensity in different cross-sections with the ∆d of 20 μm
    Fig. 7. Schematic illustration of the superposition of light intensity in different cross-sections with the ∆d of 20 μm
    SEM images for the ablated surface of 4H-SiC with different number of processing laps
    Fig. 8. SEM images for the ablated surface of 4H-SiC with different number of processing laps
    SEM images of 4H-SiC samples processed with different scanning directions
    Fig. 9. SEM images of 4H-SiC samples processed with different scanning directions
    The dependence of the ablation depth for one lap,light intensity,RMS roughness of the ablated surface,the superposition of light intensity,and RMS roughness per unit ablation depth on laser single pulse energy
    Fig. 10. The dependence of the ablation depth for one lap,light intensity,RMS roughness of the ablated surface,the superposition of light intensity,and RMS roughness per unit ablation depth on laser single pulse energy
    The dependence of the ablation depth for one lap,light intensity,RMS roughness of the ablated surface,the superposition of light intensity,and surface morphology on scanning line interval
    Fig. 11. The dependence of the ablation depth for one lap,light intensity,RMS roughness of the ablated surface,the superposition of light intensity,and surface morphology on scanning line interval
    SEM images of 4H-SiC samples processed with different material removal methods
    Fig. 12. SEM images of 4H-SiC samples processed with different material removal methods
    ParametersValves
    Diameter99.5~100 mm
    Thickness350 μm
    Surface roughness≤1 nm
    Conduction typeN-type
    Doping typeNitrogen
    Doping concentration1~2×1019 cm-3
    Wafer orientationOff axis:4° toward <11-20>±0.5°
    Resistivity0.015~0.028 Ω·cm
    Table 1. Specifications of the 4H-SiC wafer
    ParametersValves
    Centre wavelength1 028 nm
    Pulse duration190 fs
    Frequency200 kHz
    Maximum power10 W
    NA0.14 mm
    Beam qualityM2≤1.24
    Dot density2 000/mm
    Number of pulses per dot1
    Table 2. Technical parameters of the femtosecond laser micromachining system
    Zehong WAN, Hongyang DENG, Yu LEI, Guoyi TAO, Hongpo HU, Shengjun ZHOU. Low-damage Micromachining for 4H-SiC Pressure Sensitive Diaphragm by Femtosecond Laser[J]. Acta Photonica Sinica, 2023, 52(1): 0114004
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