• Infrared and Laser Engineering
  • Vol. 50, Issue S2, 20210305 (2021)
Meng Yao, Jifei Ye*, Lan Li, and Heyan Gao
Author Affiliations
  • State Key Laboratory of Laser Propulsion & Application, Department of Aerospace Science and Technology, Space Engineering University, Beijing 101416, China
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    DOI: 10.3788/IRLA20210305 Cite this Article
    Meng Yao, Jifei Ye, Lan Li, Heyan Gao. Analysis of the transient response signal of a silicon-based PIN photodiode irradiated by picosecond laser[J]. Infrared and Laser Engineering, 2021, 50(S2): 20210305 Copy Citation Text show less
    Sectional view of PIN photodiode
    Fig. 1. Sectional view of PIN photodiode
    Diagram of experimental setup
    Fig. 2. Diagram of experimental setup
    Peak voltage of irradiated diodes with different laser energy densities
    Fig. 3. Peak voltage of irradiated diodes with different laser energy densities
    Single pulse signal response waveform under different laser energy densities
    Fig. 4. Single pulse signal response waveform under different laser energy densities
    Rising edge time of the diode irradiated by different laser energy densities
    Fig. 5. Rising edge time of the diode irradiated by different laser energy densities
    Half-height width of diodes irradiated by different laser energy densities
    Fig. 6. Half-height width of diodes irradiated by different laser energy densities
    Bottom width of diodes irradiated by different laser energy densities
    Fig. 7. Bottom width of diodes irradiated by different laser energy densities
    ItemAbsolute increase/μsRelative increase
    Before saturation14.338.44%
    After saturation61.5119.42%
    Table 1. Device pulse signal FWHM changes
    ProjectAbsolute increase/μsRelative increase
    Before saturation3821%
    After saturation10347.03%
    Table 2. Device pulse signal BW changes
    Meng Yao, Jifei Ye, Lan Li, Heyan Gao. Analysis of the transient response signal of a silicon-based PIN photodiode irradiated by picosecond laser[J]. Infrared and Laser Engineering, 2021, 50(S2): 20210305
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