• Chinese Journal of Quantum Electronics
  • Vol. 23, Issue 1, 1 (2006)
Wei-wei DONG*, Ru-hua TAO, and Xiao-dong FANG
Author Affiliations
  • [in Chinese]
  • show less
    DOI: Cite this Article
    DONG Wei-wei, TAO Ru-hua, FANG Xiao-dong. Recent advances on ZnO-based films synthesized by pulsed laser deposition[J]. Chinese Journal of Quantum Electronics, 2006, 23(1): 1 Copy Citation Text show less
    References

    [1] Ohta H,Kawamura K,et al. Current injection emission from a transparent p-n junction composed of pSrCu2O2/n-ZnO [J].Appl. Phys. Lett.,2000,77(4): 475-477.

    [2] Michelotti F,et al. Measurement of the electro-optic properties of poled polymers at λ = 1.55 μm by means of sandwich structures with zinc oxide transparent electrode [J].Appl. Phys. Lett.,2003,83(22): 4477-4479.

    [3] Chen M,Pei Z L,et al. ZAO:an attractive potential substitute for ITO in flat display panels [J].Materials Science and Engineering B,2001,85(2-3): 212-217.

    [4] Koike J,Tanaka H,Ieki H. Quasi-microwave band longitudinally coupled surface acoustic wave resonator filters using ZnO/sapphire substrate [J].Jpn. J. of Appl. Phys.,1995,34: 2678-2682.

    [5] Chabouni F,Abaab M,Rezig B. Metrological characteristics of ZnO oxygen sensor at room temperature [J].Sensors and Actuators B: chemical,2004,100(1-2): 200-204.

    [6] Wang R P,Muto H,Kusumori T. Growth of c-axis oriented GaN films on quartz by pulsed laser deposition [J].Optical Materials,2003,23(1-2): 15-20.

    [7] Craciun V,Amirhaghi S,Craciun D,et al. Effects of laser wavelength and fluence on the growth of ZnO thin films by pulsed laser deposition [J].Applied Surface Science,1995,86: 99-106.

    [8] Sugiura M,et al. PLD growth of ZnO film free from deep level emission using(La,Sr)TiO3 substrate [J].Applied Surface Science,2002,197: 472-474.

    [9] Sieber I,Wanderka N,et al. Electron microscopic characterization of reactively sputtered ZnO films with different Al-doping leveks [J].Thin Solid Films,1998,330(2): 108-113.

    [10] Kim H S,Kwok H S. Correlation between target-substrate distance and oxygen pressure in pulsed laser deposition of YBa2Cu3O7 [J].Appl. Phys. Lett.,1992,61(18): 2234-2236.

    [11] Kim H,Gilmore C M,et al. Transparent conducting aluminum-doped zinc oxide thin films for organic lightemitting devices [J].Appl. Phys. Lett.,2000,76(3): 259-261.

    [12] Craciun V,Elders J,et al. Characteristics of high quality ZnO thin films deposited by pulsed laser deposition [J].Appl. Phys. Lett.,1994,65(23): 2963-2965.

    [13] Ryu Y R,Zhu S,et al. Synthesis of p-type ZnO films [J].Journal of Crystal Growth,2000,216(1-4): 330-334.

    [14] Guo X L,Tabata H,Kawai T. Pulsed laser reactive deposition of p-type ZnO film enhanced by an electron cyclotron resonance source [J].Journal of Crystal Growth,2001,223: 135-139.

    [15] Yamamoto T,et al. Solution using a codoping method to unipolarity for the fabrication of p-type ZnO [J].Japanese Journal of Applied Physics,1999,38(2B): L166-L169.

    [16] Joseph M,Tabata H,et al. Fabrication of the low-resistive p-type ZnO by codoping method [J].Physica B,2001,(302-303): 140-148.

    [17] Aoki T,Hatanaka Y. ZnO diode fabricated by excimer-laser doping [J].Appl. Phys. Lett.,2000,76(22): 3257-3258.

    [18] Ryu Y R,et al. Optical and structural properties of ZnO films deposited on GaAs by pulsed laser deposition [J].J. of Appl. Phys.,2000,88(1): 201-204.

    [19] Ryu Y R,Kim W J,White H W. Fabrication of homostructural ZnO p-n junctions [J].Journal of Crystal Growth,2000,219: 419-422.

    [20] Ohtomo A,Kawasaki M,et al. MgxZn1-xO as a Ⅱ-Ⅵ widegap semiconductor alloy [J].Appl. Phys. Lett.,1998,72(19): 2466-2468.

    [21] Park W L,Yi G C,Jany H M. Metalorganic vapor-phase epitaxial growth and photoluminescent properties of Zn1-xMgx0(0≤ x ≤ 0.49)thin films [J].APPl. Phys. Lett.,2001,79(13): 2022-2024.

    [22] Yang W,Vispute R D,Choopun S. Ultraviolet photoconductive detector based on epitaxial Mg0.34 Zn0.66O thin films [J].Appl. Phys. Lett.,2001,78(18): 2787-2789.

    [23] Krishnamoorthy S,Iliadis A A,Inumpudi A. Observation of resonant tunneling action in Zn0/Zn0.8Mg0.2O devices [J].Solid-State Electronics,2002,46: 1633-1637.

    [24] Heo Y W,Kwon Y W,et al. P-type behavior in phosphorus-doped(Zn,Mg)O device structures [J].Appl. Phys.Lett.,2004,84(18): 3474-3476.

    [25] Ip K,Heo Y W,et al. Zn0.9Mg0.1O/ZnO p-n juntions grown by pulsed-laser deposition [J].Appl. Phys. Lett.,2004,85(7): 1169-1171.

    [26] Ohtomo A,Kawasaki M. Structure and optical properties of ZnO/Mg0.2Zn0.8 O superlattices [J].Appl. Phys.Lett.,1999,75(7): 980-982.

    [27] Makino T,Chia C H,et al. Room-temperature luminescence of excitons in ZnO/(Mg,Zn)O multiple quantum wells on lattice-matched substrates [J].Appl. Phys. Lett.,2000,77(7): 975-977.

    [28] Lee S Y,Li Y,et al. Effects of chemical composition on the optical properties of Zn1-xCdxO thin films [J].Appl.Phys. Lett.,2004,85(2): 218-220.

    [29] Died T. Ferromagnetic interactions in doped semiconductors and their nanostructures [J].J. Appl. Phys.,2001,89(11): 7437-7442.

    [30] Dietl T,Ohno H,et al. Zener model description of ferromagnetism in zinc-blende magnetic semiconductors [J].Science,2000,287: 1019-1022.

    [31] Saeki H,Tabata H,Kawai T. Magnetic and electric properties of vanadium doped ZnO films [J].Solid State Communication,2001,120: 439-443.

    [32] Ueda K,Tabata H,Kawai T. Magnetic and electric properties of transition-metal-doped ZnO films [J].Appl.Phys. Lett.,2001,79(7): 988-990.

    [33] Prellier W,Fouchet A,et al. Laser ablation of CoZnO films deposited from Zn and Co metal targets on(0001)Al2O3 substrates [J].Appl. Phys. Lett.,2003,82(20): 3490-3492.

    [34] Kim J H,Kim H,et al. The origin of room temperature ferromagnetism in cobalt-doped zinc oxide thin films fabricated by PLD [J].Journal of the European Ceramic Society,2004,24(6): 1847-1851.

    [35] Ramachandran S,Tiwari A,Narayan J. Zn0.90.9Co0.1 0-based diluted magnetic semiconducting thin films [J].Appl.Phys. Lett.,2004,84(25): 5255-5257.

    [36] Sato K,Katayama-Yoshida H. First principles materials design for semiconductor spintronics [J].Semiconductor Science and Technology,2002,17(4): 367-376.

    [37] Norton D P,Pearton S J,et al. Ferromagnetism in Mn-implanted ZnO∶Sn single crystals [J].Appl. Phys. Lett.,2003,82(2): 239-241.

    [38] Yan L,Ong C K,Rao X S. Magnetic order in Co-doped and(Mn,Co)codoped ZnO thin films by pulsed laser deposition [J].J. of Appl. Phys.,2004,96(1): 508-511.

    [39] Heo Y W,Ivill M P,Ip K. Effects of high-dose Mn implantation into ZnO grown on sapphire [J].Appl. Phys.Lett.,2004,84(13): 2292-2294.

    [40] Satoh I,Kobayashi T. Magnetic and optical properties of novel magnetic semiconductor Cr-doped ZnO and its application to all oxide p-i-n diode [J].Appl. Surface Science,2004,216(1-4): 603-606.

    [41] Wakano T,Fujimura N,et al. Magnetic and magneto-transport properties of ZnO Ni films [J].Physica E,2001,10: 260-264.

    [42] Guzman E,Hochmuth H,Lorenz M. Pulsed laser deposition of Fe-and Fe,Cu-doped ZnO thin films [J].Annalen Der Physik,2004,13(1-2): 57-58.

    [43] Vispute R D,Talyansky V,et al. High quality crystalline ZnO buffer layers on sapphire(001)by pulsed laser deposition for Ⅲ-Ⅴ nitrides [J].Appl. Phys. Lett.,1997,70(20): 2735-2737.

    [44] Wang R P,et al. Effect of ZnO buffer layer on the quality of GaN films deposited by pulsed laser ablation [J].Thin Solid Films,2002,411(1): 69-75.

    [45] Vispute R D,Choopun S,et al. Pulsed laser deposition and processing of wide band gap semiconductors and related materials [J].Journal of Electronic Materials,1999,28(3): 275-286.

    DONG Wei-wei, TAO Ru-hua, FANG Xiao-dong. Recent advances on ZnO-based films synthesized by pulsed laser deposition[J]. Chinese Journal of Quantum Electronics, 2006, 23(1): 1
    Download Citation