• Chinese Optics Letters
  • Vol. 13, Issue 11, 111301 (2015)
Guohua Hu, Zhipeng Qi, Binfeng Yun, Ruohu Zhang, and Yiping Cui*
Author Affiliations
  • Advanced Photonics Center, Southeast University, Nanjing 210096, China
  • show less
    DOI: 10.3788/COL201513.111301 Cite this Article Set citation alerts
    Guohua Hu, Zhipeng Qi, Binfeng Yun, Ruohu Zhang, Yiping Cui. Compact, integrated PLZT optical switch array[J]. Chinese Optics Letters, 2015, 13(11): 111301 Copy Citation Text show less
    Schematic of 1×2 PLZT MZI optical switch. (a) Cross-sectional view of PLZT waveguide. (b) Top view of MZI switch.
    Fig. 1. Schematic of 1×2 PLZT MZI optical switch. (a) Cross-sectional view of PLZT waveguide. (b) Top view of MZI switch.
    Simulation results of the switches. (a) Voltage response of 1×2 PLZT optical switches. (b) The relationship between the isolating film thickness and the optical absorption by the electrodes.
    Fig. 2. Simulation results of the switches. (a) Voltage response of 1×2 PLZT optical switches. (b) The relationship between the isolating film thickness and the optical absorption by the electrodes.
    Schematic of PLZT optical switch array. (a) The conventional cascaded structure. (b) The proposed cascaded structure.
    Fig. 3. Schematic of PLZT optical switch array. (a) The conventional cascaded structure. (b) The proposed cascaded structure.
    PLZT optical switches chip. (a) Scanning electron microscope etched waveguide. (b) The chip connected to the bond pad by Au interconnects.
    Fig. 4. PLZT optical switches chip. (a) Scanning electron microscope etched waveguide. (b) The chip connected to the bond pad by Au interconnects.
    Voltage response of 1×2 PLZT optical switch (a) without SiO2 layer, (b) with 60 nm SiO2 layer by applying a positive voltage to Electrode 1, and (c) with 60 nm SiO2 layer by applying a positive voltage to Electrode 2.
    Fig. 5. Voltage response of 1×2 PLZT optical switch (a) without SiO2 layer, (b) with 60 nm SiO2 layer by applying a positive voltage to Electrode 1, and (c) with 60 nm SiO2 layer by applying a positive voltage to Electrode 2.
    Switching time of 1×2 PLZT optical switch.
    Fig. 6. Switching time of 1×2 PLZT optical switch.
     Insertion Loss (dB)
    “On” PortPort1Port2Port3Port4
    Port120.440.942.850.3
    Port243.520.745.249.1
    Port345.646.419.543.4
    Port44943.641.220.5
    Table 1. Insertion Loss of 1×4 Switch Array
    Guohua Hu, Zhipeng Qi, Binfeng Yun, Ruohu Zhang, Yiping Cui. Compact, integrated PLZT optical switch array[J]. Chinese Optics Letters, 2015, 13(11): 111301
    Download Citation