Researching

Journals
  • Advanced Photonics
  • Photonics Insights
  • Advanced Photonics Nexus
  • Photonics Research
  • Advanced Imaging
  • View All Journals
  • Chinese Optics Letters
  • High Power Laser Science and Engineering
    • Articles
  • Optics
  • Physics
  • Geography
  • View All Subjects
    • Conferences
  • CIOP
  • HPLSE
  • AP
  • View All Events
    • News
    About CLP
    Search by keywords or author
    Journals >Chinese Journal of Quantum Electronics >Volume 19 >Issue 6 >Page 496 > Article
    • Chinese Journal of Quantum Electronics
    • Vol. 19, Issue 6, 496 (2002)
    Topography and Growth Defects in Laser Crystal Nd:YVO4
    [in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]2, [in Chinese]3, [in Chinese]3, [in Chinese]4, [in Chinese]1, and [in Chinese]1
    Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
  • 4[in Chinese]
    • show less
    DOI: Cite this Article
    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Topography and Growth Defects in Laser Crystal Nd:YVO4[J]. Chinese Journal of Quantum Electronics, 2002, 19(6): 496 Copy Citation Text show less
    References

    [1] Fields R A, Birnbaum M, Fincher L L. Highly efficient Nd:YVO4 diode-laser end-pumped laser [J]. Appl. Phys.Lett., 1987, 51(23): 1885-1886

    Abstract
    Get PDF(in Chinese)
    Figures&Tables (0)
    Equations (0)
    References (1)
    Get Citation
    Copy Citation Text
    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Topography and Growth Defects in Laser Crystal Nd:YVO4[J]. Chinese Journal of Quantum Electronics, 2002, 19(6): 496
    Download Citation
    Tools
    Share
    Save the article for my favorites
    Paper Information
    Recommended Topics
    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology