Topography and Growth Defects in Laser Crystal Nd:YVO4

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Journals >Chinese Journal of Quantum Electronics >Volume 19 >Issue 6 >Page 496 > Article

Chinese Journal of Quantum Electronics
Vol. 19, Issue 6, 496 (2002)

Topography and Growth Defects in Laser Crystal Nd:YVO4

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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Topography and Growth Defects in Laser Crystal Nd:YVO4[J]. Chinese Journal of Quantum Electronics, 2002, 19(6): 496 Copy Citation Text

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References

[1] Fields R A, Birnbaum M, Fincher L L. Highly efficient Nd:YVO4 diode-laser end-pumped laser [J]. Appl. Phys.Lett., 1987, 51(23): 1885-1886