Studies on the gain characteristic of the AlInGaAs/AlGaAs strain quantum well

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Chinese Journal of Quantum Electronics >Volume 22 >Issue 1 >Page 85 > Article

Chinese Journal of Quantum Electronics
Vol. 22, Issue 1, 85 (2005)

Studies on the gain characteristic of the AlInGaAs/AlGaAs strain quantum well

[in Chinese]^*, [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]

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[in Chinese]

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Studies on the gain characteristic of the AlInGaAs/AlGaAs strain quantum well[J]. Chinese Journal of Quantum Electronics, 2005, 22(1): 85 Copy Citation Text

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References

[3] Chuang S L. Effect band-structure calculation of strain quantum wells [J]. Phys. Rev., 1991, 43: 9649;Physics of Optoelectronic Devices [M]. New York: Wiley, 1995.

[4] Minch J, Park S H, et al. Theory and experiment of In1-xGaxAsyP1_y and In1-x-yGaxAlyAs long-wavelength strained quantum-well lasers [J]. IEEE Journal of Quantum Electronics, 1999, 35(5): 771～782.

[5] Li Jianjun. Study of the high efficiency high power semiconductor lasers with multi-active regions and large coupoed optical cavity [D]. Beijing Polytechnic University Doctoral Disertation, 2001, 23～36.

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