[1] Takeuchi H,Tsuzuki K,Sato K,et al.Very high-speed light-source module up to 40Gb/s containing an MQW electroabsorption modulator integrated with a DFB laser[J].IEEE J.Selected Topics in Quantum Electronics,1997,3(2):336-343.

[4] Obata M,Sakuda T,Hayashibe R,et al.Characterization of contact resistance between electrode and TaNx thin-film resistor prepared by reactive sputtering[J].Electronics and Communications in Japan Part Ⅱ-Electronics,2004,87(9):30-37.

[5] Obata M,Sakuda T,Abe K,et al.Contact property between metal and tantalum nitride film characterized by using transmission line model[J].Surface & Coatings Technology,2004,180:136-139.

[6] Kim Deok-kee,Lee Heon,Kim Donghwan,et al.Electrical and mechanical properties of tantalum nitride thin films deposited by reactive sputtering[J].Journal of Crystal Growth,2005,283(3-4):404-408.

[7] Stampfl C,Freeman A J.Stable and metastable structures of the multiphase tantalum nitride system[J].Physical Review B,2005,71(2):No.024111.