• Chinese Journal of Quantum Electronics
  • Vol. 23, Issue 6, 872 (2006)
Chong-qing SUN*, De-shu ZOU, Xiao-ling GU, Jian-ming ZHANG..., Li-min DONG, Ying-pin SONG, Xia GUO, Guo GAO and Guang-di SHEN|Show fewer author(s)
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    DOI: Cite this Article
    SUN Chong-qing, ZOU De-shu, GU Xiao-ling, ZHANG Jian-ming, DONG Li-min, SONG Ying-pin, GUO Xia, GAO Guo, SHEN Guang-di. Current expansion of GaN-based LED and its affection to the device[J]. Chinese Journal of Quantum Electronics, 2006, 23(6): 872 Copy Citation Text show less

    Abstract

    The current expansion of GaN-based LED is very important to the characteristics of devices. Two kinds of devices were introduced and their merits and drawbacks were compared and the current expansion was introduced. It is pointed out that the ring-N-electrode was propitious to the current expansion and proved by experiments. The characteristic of the ring-N-eledtrode was comparied with the common N-electrode,and there was 6% reduction at forward voltage(20 mA). The total radiation power of the device was also improved at the same forward current. When the device worked for 50 hours,the total radiation power of the ring-electrode device was enhanced 8% compared to the traditional device. The contribution of the ring-N-electrode was proved particularly.
    SUN Chong-qing, ZOU De-shu, GU Xiao-ling, ZHANG Jian-ming, DONG Li-min, SONG Ying-pin, GUO Xia, GAO Guo, SHEN Guang-di. Current expansion of GaN-based LED and its affection to the device[J]. Chinese Journal of Quantum Electronics, 2006, 23(6): 872
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