• Laser & Optoelectronics Progress
  • Vol. 56, Issue 8, 081601 (2019)
Ming Zhang*, Jingwei Lü, Lin Yang, Wenjing Xu, Jianxin Wang, Chao Liu, and Haiwei Mou
Author Affiliations
  • College of Electronics Science, Northeast Petroleum University, Daqing, Heilongjiang 163318, China
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    DOI: 10.3788/LOP56.081601 Cite this Article Set citation alerts
    Ming Zhang, Jingwei Lü, Lin Yang, Wenjing Xu, Jianxin Wang, Chao Liu, Haiwei Mou. Unidirectional Scattering Properties of Silicon Nanocross Dimer[J]. Laser & Optoelectronics Progress, 2019, 56(8): 081601 Copy Citation Text show less
    Structural diagram of silicon nanocross dimer
    Fig. 1. Structural diagram of silicon nanocross dimer
    Normalized multipole contributions to scattering cross-section of silicon nanocross dimer
    Fig. 2. Normalized multipole contributions to scattering cross-section of silicon nanocross dimer
    Forward scattering and forward/backward ratio spectra for silicon nanocross dimer
    Fig. 3. Forward scattering and forward/backward ratio spectra for silicon nanocross dimer
    Forward/backward ratio scattering spectra for silicon nanocross dimer. (a) Under different heights; (b) under different widths
    Fig. 4. Forward/backward ratio scattering spectra for silicon nanocross dimer. (a) Under different heights; (b) under different widths
    Electric field enhancement profiles of silicon nanocross dimer. (a) λ=405 nm; (b) λ=484 nm; (c) λ=667 nm; (d) λ=789 nm
    Fig. 5. Electric field enhancement profiles of silicon nanocross dimer. (a) λ=405 nm; (b) λ=484 nm; (c) λ=667 nm; (d) λ=789 nm
    Magnetic field enhancement profiles of silicon nanocross dimer. (a) λ=405 nm; (b) λ=484 nm; (c) λ=667 nm; (d) λ=789 nm
    Fig. 6. Magnetic field enhancement profiles of silicon nanocross dimer. (a) λ=405 nm; (b) λ=484 nm; (c) λ=667 nm; (d) λ=789 nm
    Surface charge distributions corresponding to silicon nanocross dimer. (a) λ=405 nm; (b) λ=484 nm; (c) λ=667 nm; (d) λ=789 nm
    Fig. 7. Surface charge distributions corresponding to silicon nanocross dimer. (a) λ=405 nm; (b) λ=484 nm; (c) λ=667 nm; (d) λ=789 nm
    2D and 3D far-field distributions corresponding to silicon nanocross dimer. (a) λ=434 nm; (b) λ=612 nm; (c) λ=857 nm
    Fig. 8. 2D and 3D far-field distributions corresponding to silicon nanocross dimer. (a) λ=434 nm; (b) λ=612 nm; (c) λ=857 nm
    Ming Zhang, Jingwei Lü, Lin Yang, Wenjing Xu, Jianxin Wang, Chao Liu, Haiwei Mou. Unidirectional Scattering Properties of Silicon Nanocross Dimer[J]. Laser & Optoelectronics Progress, 2019, 56(8): 081601
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