• Chinese Journal of Lasers
  • Vol. 27, Issue 8, 687 (2000)
[in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
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  • [in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Study on Optical Characteristics of InGaAsP/GaAs SQW Lasers[J]. Chinese Journal of Lasers, 2000, 27(8): 687 Copy Citation Text show less

    Abstract

    Al-free InGaAsP/GaAs single quantum well separate confinement heterostructures have been grown by liquid phase epitaxy (LPE). The measurements showed that the far-field distribution was approximately a Gaussian profile. The refractive index profile of dielectric optical waveguides was analyzed by theory of grading waveguide. The work is useful for improving the beam quality.
    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Study on Optical Characteristics of InGaAsP/GaAs SQW Lasers[J]. Chinese Journal of Lasers, 2000, 27(8): 687
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