1 Gbps free-space deep-ultraviolet communications based on III-nitride micro-LEDs emitting at 262 nm

Xiangyu He; Enyuan Xie; Mohamed Sufyan Islim; Ardimas Andi Purwita; Jonathan J. D. McKendry; Erdan Gu; Harald Haas; Martin D. Dawson

doi:10.1364/PRJ.7.000B41

[1] M. S. Islim, S. Videv, M. Safari, E. Xie, J. J. D. McKendry, E. Gu, M. D. Dawson, H. Haas. The impact of solar irradiance on visible light communications. J. Lightwave Technol., 36, 2376-2386(2018).

[2] Z. Xu, B. M. Sadler. Ultraviolet communications: potential and state-of-the-art. IEEE Commun. Mag., 46, 67-73(2008).

[3] K. Kojima, Y. Yoshida, M. Shiraiwa, Y. Awaji, A. Kanno, N. Yamamoto, S. Chichibu. 1.6-Gbps LED-based ultraviolet communication at 280 nm in direct sunlight. European Conference on Optical Communication (ECOC), 1-3(2018).

[4] S. Karp, R. M. Gagliardi, S. E. Moran, L. B. Stotts. Optical Channels: Fibers, Clouds, Water, and the Atmosphere(2013).

[5] D. E. Sunstein. A scatter communications link at ultraviolet frequencies(1968).

[6] T. Feng, F. Xiong, Q. Ye, Z. Pan, Z. Dong, Z. Fang. Non-line-of-sight optical scattering communication based on solar-blind ultraviolet light. Proc. SPIE, 6783, 67833X(2007).

[7] D. Han, Y. Liu, K. Zhang, P. Luo, M. Zhang. Theoretical and experimental research on diversity reception technology in NLOS UV communication system. Opt. Express, 20, 15833-15842(2012).

[8] J. J. Puschell, R. Bayse. High data rate ultraviolet communication systems for the tactical battlefield. Proc. IEEE, 1, 253-267(1990).

[9] M. Geller, T. E. Keenan, D. E. Altman, R. H. Patterson. Optical non-line-of-sight covert, secure high data communication system. U.S. Patent(1985).

[10] X. Sun, Z. Zhang, A. Chaaban, T. K. Ng, C. Shen, R. Chen, J. Yan, H. Sun, X. Li, J. Wang, J. Li, M.-S. Alouini, B. S. Ooi. 71-Mbit/s ultraviolet-B LED communication link based on 8-QAM-OFDM modulation. Opt. Express, 25, 23267-23274(2017).

[11] E. Xie, M. Stonehouse, R. Ferreira, J. J. McKendry, J. Herrnsdorf, X. He, S. Rajbhandari, H. Chun, A. V. Jalajakumari, O. Almer, G. Faulkner, I. M. Watson, E. Gu, R. Henderson, D. O’Brien, M. D. Dawson. Design, fabrication, and application of GaN-based micro-LED arrays with individual addressing by N-electrodes. IEEE Photon. J., 9, 7907811(2017).

[12] S. Rajbhandari, J. J. McKendry, J. Herrnsdorf, H. Chun, G. Faulkner, H. Haas, I. M. Watson, D. O’Brien, M. D. Dawson. A review of gallium nitride LEDs for multi-gigabit-per-second visible light data communications. Semicond. Sci. Technol., 32, 023001(2017).

[13] E. F. Schubert. Light-Emitting Diodes(2006).

[14] J. J. McKendry, R. P. Green, A. Kelly, Z. Gong, B. Guilhabert, D. Massoubre, E. Gu, M. D. Dawson. High-speed visible light communications using individual pixels in a micro light-emitting diode array. IEEE Photon. Technol. Lett., 22, 1346-1348(2010).

[15] R. X. Ferreira, E. Xie, J. J. McKendry, S. Rajbhandari, H. Chun, G. Faulkner, S. Watson, A. E. Kelly, E. Gu, R. V. Penty, I. H. White, D. C. O’Brien, M. D. Dawson. High bandwidth GaN-based micro-LEDs for multi-Gb/s visible light communications. IEEE Photon. Technol. Lett., 28, 2023-2026(2016).

[16] A. Rashidi, M. Monavarian, A. Aragon, A. Rishinaramangalam, D. Feezell. GHz-bandwidth nonpolar InGaN/GaN micro-LED operating at low current density for visible-light communication. IEEE International Semiconductor Laser Conference (ISLC), 1-2(2018).

[17] A. Rashidi, M. Monavarian, A. Aragon, A. Rishinaramangalam, D. Feezell. Nonpolar m-plane InGaN/GaN micro-scale light-emitting diode with 1.5 GHz modulation bandwidth. IEEE Electron Device Lett., 39, 520-523(2018).

[18] M. S. Islim, R. X. Ferreira, X. He, E. Xie, S. Videv, S. Viola, S. Watson, N. Bamiedakis, R. V. Penty, I. H. White, A. E. Kelly, E. Gu, H. Haas, M. D. Dawson. Towards 10 Gb/s orthogonal frequency division multiplexing-based visible light communication using a GaN violet micro-LED. Photon. Res., 5, A35-A43(2017).

[19] J. J. McKendry, D. Tsonev, R. Ferreira, S. Videv, A. D. Griffiths, S. Watson, E. Gu, A. E. Kelly, H. Haas, M. D. Dawson. Gb/s single-LED OFDM-based VLC using violet and UV gallium nitride μLEDs. Summer Topicals Meeting Series (SUM), 175-176(2015).

[20] N. Maeda, M. Jo, H. Hirayama. Improving the efficiency of AlGaN deep-UV LEDs by using highly reflective Ni/Al p-type electrodes. Phys. Status Solidi A, 215, 1700435(2018).

[21] M. Kneissl. A brief review of III-nitride UV emitter technologies and their applications. III-Nitride Ultraviolet Emitters, 1-25(2016).

[22] G.-D. Hao, M. Taniguchi, N. Tamari, S.-I. Inoue. Enhanced wall-plug efficiency in AlGaN-based deep-ultraviolet light-emitting diodes with uniform current spreading p-electrode structures. J. Phys. D, 49, 235101(2016).

[23] . APD 430x operation manual.

[24] R. P. Green, J. J. McKendry, D. Massoubre, E. Gu, M. D. Dawson, A. E. Kelly. Modulation bandwidth studies of recombination processes in blue and green InGaN quantum well micro-light-emitting diodes. Appl. Phys. Lett., 102, 091103(2013).

[25] J. Cho, E. Yoon, Y. Park, W. J. Ha, J. K. Kim. Characteristics of blue and ultraviolet light-emitting diodes with current density and temperature. Electron. Mater. Lett., 6, 51-53(2010).

[26] M. Shatalov, W. Sun, A. Lunev, X. Hu, A. Dobrinsky, Y. Bilenko, J. Yang, M. Shur, R. Gaska, C. Moe, G. Garrett, M. Wraback. AlGaN deep-ultraviolet light-emitting diodes with external quantum efficiency above 10%. Appl. Phys. Express, 5, 082101(2012).

[27] J. G. Proakis. Digital Communications(1995).

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