• Photonics Research
  • Vol. 10, Issue 8, 1996 (2022)
Ning Liu1,2,5,*, Xiaohong Yan3,4, Long Gao3, Sergey Beloshapkin2..., Christophe Silien1,2 and Hong Wei3,6,*|Show fewer author(s)
Author Affiliations
  • 1Department of Physics, University of Limerick, Limerick, Ireland
  • 2Bernal Institute, University of Limerick, Limerick, Ireland
  • 3Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
  • 4School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
  • 5e-mail: ning.liu@ul.ie
  • 6e-mail: weihong@iphy.ac.cn
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    DOI: 10.1364/PRJ.450399 Cite this Article Set citation alerts
    Ning Liu, Xiaohong Yan, Long Gao, Sergey Beloshapkin, Christophe Silien, Hong Wei, "Ultrathin oxide controlled photocurrent generation through a metal–insulator–semiconductor heterojunction," Photonics Res. 10, 1996 (2022) Copy Citation Text show less

    Abstract

    Recent advances in nanoscale lasers, amplifiers, and nonlinear optical converters have demonstrated the unprecedented potential of metal–insulator–semiconductor (MIS) structures as a versatile platform to realize integrated photonics at the nanoscale. While the electric field enhancement and confinement have been discussed intensively in MIS based plasmonic structures, little is known about the carrier redistribution across the heterojunction and photocurrent transport through the oxide. Herein, we investigate the photo-generated charge transport through a single CdSe microbelt-Al2O3-Ag heterojunction with oxide thickness varying from 3 nm to 5 nm. Combining photocurrent measurements with finite element simulations on electron (hole) redistribution across the heterojunction, we are able to explain the loss compensation observed in hybrid plasmonic waveguides at substantially reduced pump intensity based on MIS geometry compared to its photonic counterpart. We also demonstrate that the MIS configuration offers a low-dark-current photodetection scheme, which can be further exploited for photodetection applications.
    Jn(r,t)=qnμnEc+μnkBTG(nNc)n+qnDn,thln(T),(B1)

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    nt=1q(·Jn)Un,pt=1q(·Jp)Up,(B2)

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    δnJn=qkBTeqVmaxkBTVminVmaxeqVxkBTe4πhl1l2max(0,2m(EbqVx))dldVx,(B3)

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    Gstim=4π2h|H12av|2(fcfv)gred(ω)=α0(fcfv),(B4)

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    fc=11+exp(E2cEfnkBT),fv=11+exp(E1vEfpkBT),(B5)

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    E2c=Ec+mrme(ωEg),E1v=Evmrmh(ωEg),1mr=1me+1mh,(B6)

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    g(dB)=4.3α0d(1fv+fc).(F1)

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    Ning Liu, Xiaohong Yan, Long Gao, Sergey Beloshapkin, Christophe Silien, Hong Wei, "Ultrathin oxide controlled photocurrent generation through a metal–insulator–semiconductor heterojunction," Photonics Res. 10, 1996 (2022)
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