Ultrathin oxide controlled photocurrent generation through a metal–insulator–semiconductor heterojunction

Ning Liu; Xiaohong Yan; Long Gao; Sergey Beloshapkin; Christophe Silien; Hong Wei

doi:10.1364/PRJ.450399

Journals >Photonics Research >Volume 10 >Issue 8 >Page 1996 > Article

Photonics Research
Vol. 10, Issue 8, 1996 (2022)

Ultrathin oxide controlled photocurrent generation through a metal–insulator–semiconductor heterojunction

Ning Liu^1,2,5,*, Xiaohong Yan^3,4, Long Gao³, Sergey Beloshapkin²..., Christophe Silien^1,2 and Hong Wei^3,6,*|Show fewer author(s)

Author Affiliations

¹Department of Physics, University of Limerick, Limerick, Ireland

²Bernal Institute, University of Limerick, Limerick, Ireland

³Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

⁴School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China

⁵e-mail: ning.liu@ul.ie

⁶e-mail: weihong@iphy.ac.cn

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DOI: 10.1364/PRJ.450399 Cite this Article Set citation alerts

Ning Liu, Xiaohong Yan, Long Gao, Sergey Beloshapkin, Christophe Silien, Hong Wei, "Ultrathin oxide controlled photocurrent generation through a metal–insulator–semiconductor heterojunction," Photonics Res. 10, 1996 (2022) Copy Citation Text

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