SiSb films are deposited on the polycarbonate optical discs by direct current magnetron sputtering technology. Discs with SiSb films are initialized at laser power 400,500,600,700,800,1200 mW,respectively,by phase change optical disc initializer. The transformation of reflectivity at wavelength from 300 nm to 800 nm of films initialized at different laser power is compared. The results illustrate that reflectivity and reflectivity contrast of SiSb films increase gradually with the enhancement of initializing laser power. Reflectivity contrast of the novel SiSb films initialized at laser power 1200 mW is as high as 30%-35%,which indicates novel SiSb phase change material is a promising material for optical data storage. X-ray diffraction is performed on the as-deposited SiSb films and those laser-initialized at laser power 400,800,1200 mW,respectively. The study shows that the as-deposited SiSb is amorphous state,crystallization to different extent in the samples initialized at different laser power takes place,and the higher the laser power is the higher the degree of crystallization in the samples. Crystallization phase of the samples is hexagonal rhomb-centered structure of antimony,which is similar to the structure of thermal annealing SiSb films reported by other papers.