[1] S. Strite, M. E. Lin, H. Morkoc. Progress and prospects for GaN and the Ⅲ-V nitride semiconductors. Thin Solid Films, 1993, 231: 197～210
[2] M. Smith, G. D. Chen, J. Y. Lin et al.. Dynamics of a band-edge transition in GaN grown by molecular beam epitaxy. Appl. Phys. Lett., 1995, 66(25): 3474～3476
[3] S. Nakamura, M. Senoh, T. Mukai. P-GaN/N-InGaN/N-GaN double-heterastructure blue-light-emitting diodes. Japan J. Appl. Phys., 1993, 32: L8～L11, part 2, No.1 A/B
[4] M. A. Khan, A. Bhattarai, J. N. Kuznia et al.. High electron modility transistor based on a GaN-AlxGa1-xN hoterojunction. Appl. Phys. Lett., 1993, 63(9): 1214～1215
[5] W. Shan, T. J. Schmidt, X. H. Yang et al.. Temperature dependence of interband transitions in GaN grown by metralorganic chemical vapor deposition. Appl. Phys. Lett., 1995, 66(8): 985～987
[6] U. Heim, P. Wiesner. Direct evidence for a bottleneck of exciton-polariton relaxation in CdS. Phys. Rev. Lett., 1973, 30(24): 1025～1027
[7] J. I. Pankove. Optical Process in Scemiconductors. New York: Dover Publishers Inc., 1971, Chap. 6
