• Laser & Optoelectronics Progress
  • Vol. 58, Issue 23, 2316004 (2021)
Qiang Zhang1, Dan Fang2、*, Xiaoyu Qi1, and Han Li1
Author Affiliations
  • 1Department of Optical and Electronical Science, Changchun College of Electronic Technology, Changchun , Jilin 130022, China
  • 2State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology, Changchun , Jilin 130022, China
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    DOI: 10.3788/LOP202158.2316004 Cite this Article Set citation alerts
    Qiang Zhang, Dan Fang, Xiaoyu Qi, Han Li. Analysis of High-Resolution X-Ray Diffraction for InAs/GaSb Superlattice[J]. Laser & Optoelectronics Progress, 2021, 58(23): 2316004 Copy Citation Text show less
    Structural diagrams of the first group of samples with the same thickness and different periods. (a) Sample 1; (b) sample 2
    Fig. 1. Structural diagrams of the first group of samples with the same thickness and different periods. (a) Sample 1; (b) sample 2
    Structural diagrams of the second group of samples with the same thickness and different periods. (a) Sample 3; (b) sample 4
    Fig. 2. Structural diagrams of the second group of samples with the same thickness and different periods. (a) Sample 3; (b) sample 4
    Simulation of samples. (a) Sample 1; (b) sample 2; (c) sample 3; (d) sample 4
    Fig. 3. Simulation of samples. (a) Sample 1; (b) sample 2; (c) sample 3; (d) sample 4
    HRXRD curves of the first group of samples. (a) Sample 1; (b) sample 2
    Fig. 4. HRXRD curves of the first group of samples. (a) Sample 1; (b) sample 2
    AFM morphologies of the first group of samples. (a) Sample 1; (b) sample 2
    Fig. 5. AFM morphologies of the first group of samples. (a) Sample 1; (b) sample 2
    HRXRD curves of the second group of samples. (a) Sample 3; (b) sample 4
    Fig. 6. HRXRD curves of the second group of samples. (a) Sample 3; (b) sample 4
    AFM morphologies of the second group of samples. (a) Sample 3; (b) sample 4
    Fig. 7. AFM morphologies of the second group of samples. (a) Sample 3; (b) sample 4
    No.FWHM /(°)D /nmε /%RMS of surface roughness /nm
    Sample 10.1505.450.560.45
    Sample 20.0275.590.430.31
    Sample 30.1125.170.640.81
    Sample 40.0856.230.671.22
    Table 1. Calculation parameters for two groups of samples
    Qiang Zhang, Dan Fang, Xiaoyu Qi, Han Li. Analysis of High-Resolution X-Ray Diffraction for InAs/GaSb Superlattice[J]. Laser & Optoelectronics Progress, 2021, 58(23): 2316004
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