A 220 GHz high integration and high resolution detector

CUI Da-Sheng; DING Zheng-Zhi; HAO Hai-Dong; LV Xin

doi:10.11972/j.issn.1001-9014.2017.06.003

[1] Huang J, Zhao Q. A W‐band monolithic broadwidth frequency multiplier on millimeter Schottky diode and metamaterial［J］. Microwave & Optical Technology Letters, 2015, 57(3):525-530.

[2] Zhu M, Li X, Chung S, et al. Photo-induced selective gas detection based on reduced graphene oxide/Si Schottky diode［J］. Carbon, 2015, 84(1):138-145.

[3] Viegas C, Alderman B, Powell J, et al. Characterization of 94 GHz and 183 GHz planar schottky diode based radiometer modules［C］// IEEE Mtt-S International Microwave and Rf Conference. IEEE, 2015:296-299.

[4] Mou J, Guo D, Xue Q, et al. THz mixtenna chips and quasi-optical mixers for focal plane imaging applications［C］// International Conference on Infrared, Millimeter, and Terahertz Waves. IEEE, 2015:1-1.

[5] Knap W, Teppe F, Meziani Y, et al. Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors［J］. Applied Physics Letters, 2004, 85(85):675-677.

[6] Tauk R, Teppe F, Boubanga S, et al. Plasma wave detection of terahertz radiation by silicon field effects transistors: Responsivity and noise equivalent power［J］. Applied Physics Letters, 2006, 89(25):253511-253511-3.

[7] Huang F J, O K K. Metal-oxide semiconductor field-effect transistors using Schottky barrier drains［J］. Electronics Letters, 1997, 33(15):1341-1342.

[8] Godi G, Sauleau R, Thouroude D. Performance of reduced size substrate lens antennas for Millimeter-wave communications［J］. IEEE Transactions on Antennas & Propagation, 2005, 53(4):1278-1286.

[9] Rein H, Schroter M. Base spreading resistance of square-emitter transistors and its dependence on current crowding［J］. IEEE Transactions on Electron Devices, 1989, 36(4):770-773.

[10] Liu C, Li F. Determination of Schottky barrier height independent on temperature via reverse current–reverse voltage and temperature［J］. Computational Materials Science, 2015, 107:170-174.

[11] Han R, Zhang Y, Coquillat D, et al. A 280 GHz Schottky diode detector in 130 nm digital CMOS［J］. IEEE Journal of Solid-State Circuits, 2010, 46(11):2602-2612.