• Photonics Research
  • Vol. 10, Issue 8, 1886 (2022)
Zihao Shuang1、2、3, Hai Zhou1、3、4、*, Dingjun Wu2、3, Xuhui Zhang2、3, Boao Xiao2、3, Jinxia Duan2、3, and Hao Wang2、3、5、*
Author Affiliations
  • 1International School of Microelectronics, Dongguan University of Technology, Dongguan 523808, China
  • 2Hubei Yangtze Memory Laboratories, Wuhan 430205, China
  • 3School of Microelectronics, Hubei University, Wuhan 430062, China
  • 4e-mail: hizhou@dgut.edu.cn
  • 5e-mail: wangh@hubu.edu.cn
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    DOI: 10.1364/PRJ.452883 Cite this Article Set citation alerts
    Zihao Shuang, Hai Zhou, Dingjun Wu, Xuhui Zhang, Boao Xiao, Jinxia Duan, Hao Wang. High-performance Ag2BiI5 Pb-free perovskite photodetector[J]. Photonics Research, 2022, 10(8): 1886 Copy Citation Text show less
    Characteristics of Ag2BiI5 films with different precursor concentrations: (a) Ag2BiI5 electronic structure diagram; (b)–(f) SEM morphologies of Ag2BiI5 films prepared by 0.2–0.6 M precursor concentrations; (g)–(i) XPS high-resolution spectra of the perovskite surface analysis.
    Fig. 1. Characteristics of Ag2BiI5 films with different precursor concentrations: (a) Ag2BiI5 electronic structure diagram; (b)–(f) SEM morphologies of Ag2BiI5 films prepared by 0.2–0.6 M precursor concentrations; (g)–(i) XPS high-resolution spectra of the perovskite surface analysis.
    (a) XRD patterns; (b) absorption spectrum curves; (c) TRPL curves.
    Fig. 2. (a) XRD patterns; (b) absorption spectrum curves; (c) TRPL curves.
    (a) Device structure diagram. (b) Cross-sectional SEM image of a PD. (c) Light/dark current statistics of PDs at various concentrations. (d) Switching ratio of PDs at various concentrations.
    Fig. 3. (a) Device structure diagram. (b) Cross-sectional SEM image of a PD. (c) Light/dark current statistics of PDs at various concentrations. (d) Switching ratio of PDs at various concentrations.
    (a) Light/dark current statistics of PDs at various rotating speeds. (b) Switching ratio of PDs at various rotating speeds. (c) Light/dark current statistics of PDs with different ratios of AgI and BiI3. (d) Switching ratio of PDs with different ratios of AgI and BiI3.
    Fig. 4. (a) Light/dark current statistics of PDs at various rotating speeds. (b) Switching ratio of PDs at various rotating speeds. (c) Light/dark current statistics of PDs with different ratios of AgI and BiI3. (d) Switching ratio of PDs with different ratios of AgI and BiI3.
    Performances of Ag2BiI5 perovskite PDs. (a) I-V curve; (b) I-t curves of PDs under different light intensities; (c) I-t curve at weak-light intensity; (d) current versus optical power curve of the PD, showing that the LDR of the device is 138 dB; (e) R and D* curves of a PD; (f) response time of a PD.
    Fig. 5. Performances of Ag2BiI5 perovskite PDs. (a) I-V curve; (b) I-t curves of PDs under different light intensities; (c) I-t curve at weak-light intensity; (d) current versus optical power curve of the PD, showing that the LDR of the device is 138 dB; (e) R and D* curves of a PD; (f) response time of a PD.
    Stability of unencapsulated PDs. (a) I-t curves of PDs under long-time illumination; (b) thermal and storage stability characteristics; (c) XRD patterns of PDs.
    Fig. 6. Stability of unencapsulated PDs. (a) I-t curves of PDs under long-time illumination; (b) thermal and storage stability characteristics; (c) XRD patterns of PDs.
    PhotodetectorPreparation MethodResponsivity [A  W1]Detectivity [Jones]Response SpeedRefs.
    Graphene/MoS2/(PEA)2SnI4/grapheneMechanical exfoliating0.1218.09×10934 ms[28]
    TiO2/CsSnI3/P3HTSpin-coating0.2571.5×10110.35/1.6 ms[29]
    Cs3Cu2I5/SiSpin-coating0.133.1×101092.5/189.2 μs[30]
    MA3Bi2I9Spin-coating1.76×1031.3×101226.81/41.89 ms[31]
    Cs2AgBiBr6/SnO2Low-pressure assisted method0.112.4×10103 ms[32]
    Cs2AgBiBr6Top-seeded solution growth9.2×1042.62×10975/38 ms[33]
    FTO/Ga3+-doped ZnO NR/MAPbI3/MoO3/AuTwo-step deposition0.31.3×1012<2/<2  ms[34]
    FTO/ZnO/MgO/MAPbI3/CSpin-coating and immersion5.9×1021.5×10120.63/1.6 ms[35]
    ITO/CdS/MAPbI3/AuSpin-coating0.432.3×10113.2/9.6 ms[36]
    CsPbCl3 SCs0.2681.59×101028.4/2.7 ms[37]
    CsPbBr3 MCsInverse temperature crystallization0.1724.8×10120.14/0.12 ms[38]
    FTO/SnO2/Ag2BiI5/CSpin-coating0.35.3×10120.34/0.26 msOur work
    Table 1. Preparation Method and Device Performance of Metal Halide Perovskite Photodetectors
    Zihao Shuang, Hai Zhou, Dingjun Wu, Xuhui Zhang, Boao Xiao, Jinxia Duan, Hao Wang. High-performance Ag2BiI5 Pb-free perovskite photodetector[J]. Photonics Research, 2022, 10(8): 1886
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