The parasitic absorption loss in the light-injection side of HIT (heterojunction with intrinsic thin layer) structured a-Si∶H/c-Si solar cell is one of the bottlenecks to limit transfer efficiency improvement of HIT cells. A kind of bi-facial solar cell with a structure of Ag grid/SiNx/c-Si(n+)/n-c-Si/a-Si∶H(i)/a-Si∶H(p+)/ITO/Ag grid is designed and prepared. The properties of the solar cell samples with light coming from each side are analyzed by means of J-V characteristics, quantum efficiency and Suns-Voc measurement methods. The results show that higher short-circuit current density of the cells can be obtained with rear-junction installation than that with a front-junction installation, which is the reason for higher conversion efficiency with rear-junction installation. In the research, the maximum short-circuit current density of 40.3 mA·cm-2 is got in a cell with wafer thickness of 160 μm, which is higher than the maximum value of the short-circuit current density of 39.5 mA·cm-2 for the HIT cells.