[1] Slaoui A, Foulon F, Siffert P. Excimer laser induced doping of phosphorus into silicon. J. Appl. Phys., 1990, 67(10):6197
[2] Foulon F, Slaoui A, Fogarassy E et al. Optimization of parameters involved in the photochemical doping of Si with a pulsed ArF excimer laser [J]. Appl. Surf. Sci., 1989, 36:384
[3] Ehrlich D J, Tao J Y. Submicrometer-linewidth doping and relief definition in silicon by laser-controlled diffusion [J]. Appl. Phys. Left., 1982, 41(3): 297
[4] Baeri P, Campisano S U, Foti G et al. Arsenic diffusion in silicon melted by high-power nano-second laser pulsing [J]. Appl. Phys. Lett., 1978, 33(2): 137
[5] Fokumura K S, Kaneka S. Excimer-laser doping into Si thin films [J]. J. Appl. Phys., 1990, 67(5): 2359