The SnO2 film was successfully deposited on Si wafer by a simple chemical bath method to fabricate n-SnO2/p-Si heterojunction structure photoelectric device. The self-made chemical bath system is very cheap and convenient. The structural, optical and electrical properies of the SnO2 film were studied by XRD, SEM, XPS, PL, UV-VIS spectrophotometer and Hall effect measurement. The current-voltage (I-V) curve of SnO2/p-Si heterojunction device was tested and analyzed in detail. SnO2/p-Si heterojunction shows a prominent visible-light-driven photoelectrical performance under the low intensity light irradiation. Great photoelectric behavior was also obtained.