• Microelectronics
  • Vol. 53, Issue 2, 221 (2023)
YIN Yongsheng, ZHU Shoujia, YANG Yue, and DENG Honghui
Author Affiliations
  • [in Chinese]
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    DOI: 10.13911/j.cnki.1004-3365.220123 Cite this Article
    YIN Yongsheng, ZHU Shoujia, YANG Yue, DENG Honghui. Design of a Level Shifter for High dV/dt Noise Immunity[J]. Microelectronics, 2023, 53(2): 221 Copy Citation Text show less
    References

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    [5] MING X, ZHANG X, ZHANG Z W, et al. A high-voltage half-bridge gate drive circuit for GaN devices with high-speed low-power and high-noise-immunity level shifter [C] // IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD). Chicago, IL, USA. 2018: 355-358.

    [6] LIU Z, CONG L, LEE H. Design of on-chip gate drivers with power-efficient high-speed level shifting and dynamic timing control for high-voltage synchronous switching power converters [J]. IEEE Journal of Solid-State Circuits, 2015, 50(6): 1463-1477.