Surface-illuminated photon-trapping high-speed Ge-on-Si photodiodes with improved efficiency up to 1700 nm

Hilal Cansizoglu; Cesar Bartolo-Perez; Yang Gao; Ekaterina Ponizovskaya Devine; Soroush Ghandiparsi; Kazim G. Polat; Hasina H. Mamtaz; Toshishige Yamada; Aly F. Elrefaie; Shih-Yuan Wang; M. Saif Islam

doi:10.1364/PRJ.6.000734

Journals >Photonics Research >Volume 6 >Issue 7 >Page 734 > Article

Photonics Research
Vol. 6, Issue 7, 734 (2018)

Surface-illuminated photon-trapping high-speed Ge-on-Si photodiodes with improved efficiency up to 1700 nm | On the Cover

Hilal Cansizoglu^1,†, Cesar Bartolo-Perez^1,†, Yang Gao^1,*, Ekaterina Ponizovskaya Devine^1,2..., Soroush Ghandiparsi¹, Kazim G. Polat¹, Hasina H. Mamtaz¹, Toshishige Yamada^2,3, Aly F. Elrefaie^1,2, Shih-Yuan Wang² and M. Saif Islam^1,4|Show fewer author(s)

Author Affiliations

¹Electrical and Computer Engineering, University of California—Davis, Davis, California 95618, USA

²W&WSens Devices, Inc., 4546 El Camino, Suite 215, Los Altos, California 94022, USA

³Electrical Engineering, Baskin School of Engineering, University of California, Santa Cruz, California 95064, USA

⁴e-mail: sislam@ucdavis.edu

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DOI: 10.1364/PRJ.6.000734 Cite this Article Set citation alerts

Hilal Cansizoglu, Cesar Bartolo-Perez, Yang Gao, Ekaterina Ponizovskaya Devine, Soroush Ghandiparsi, Kazim G. Polat, Hasina H. Mamtaz, Toshishige Yamada, Aly F. Elrefaie, Shih-Yuan Wang, M. Saif Islam, "Surface-illuminated photon-trapping high-speed Ge-on-Si photodiodes with improved efficiency up to 1700 nm," Photonics Res. 6, 734 (2018) Copy Citation Text

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