Surface-illuminated photon-trapping high-speed Ge-on-Si photodiodes with improved efficiency up to 1700 nm

Hilal Cansizoglu; Cesar Bartolo-Perez; Yang Gao; Ekaterina Ponizovskaya Devine; Soroush Ghandiparsi; Kazim G. Polat; Hasina H. Mamtaz; Toshishige Yamada; Aly F. Elrefaie; Shih-Yuan Wang; M. Saif Islam

doi:10.1364/PRJ.6.000734

Journals >Photonics Research >Volume 6 >Issue 7 >Page 734 > Article

Photonics Research
Vol. 6, Issue 7, 734 (2018)

Surface-illuminated photon-trapping high-speed Ge-on-Si photodiodes with improved efficiency up to 1700 nm | On the Cover

Hilal Cansizoglu^1、†, Cesar Bartolo-Perez^1、†, Yang Gao^1、*, Ekaterina Ponizovskaya Devine^1、2, Soroush Ghandiparsi¹, Kazim G. Polat¹, Hasina H. Mamtaz¹, Toshishige Yamada^2、3, Aly F. Elrefaie^1、2, Shih-Yuan Wang², and M. Saif Islam^1、4

Author Affiliations

¹Electrical and Computer Engineering, University of California—Davis, Davis, California 95618, USA

²W&WSens Devices, Inc., 4546 El Camino, Suite 215, Los Altos, California 94022, USA

³Electrical Engineering, Baskin School of Engineering, University of California, Santa Cruz, California 95064, USA

⁴e-mail: sislam@ucdavis.edu

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DOI: 10.1364/PRJ.6.000734 Cite this Article Set citation alerts

Hilal Cansizoglu, Cesar Bartolo-Perez, Yang Gao, Ekaterina Ponizovskaya Devine, Soroush Ghandiparsi, Kazim G. Polat, Hasina H. Mamtaz, Toshishige Yamada, Aly F. Elrefaie, Shih-Yuan Wang, M. Saif Islam. Surface-illuminated photon-trapping high-speed Ge-on-Si photodiodes with improved efficiency up to 1700 nm[J]. Photonics Research, 2018, 6(7): 734 Copy Citation Text

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