[1] SHEN L, HEIKMAN S, MORAN B, et al. AlGaN/AlN/GaN high-power microwave HEMT ［J］. IEEE Electron Device Letters, 2001, 22(10): 457-459.
[2] PENGELLY R S, WOOD S M, MILLIGAN J W, et al. A review of GaN on SiC high electron-mobility power transistors and MMICs ［J］. IEEE Transactions on Microwave Theory & Techniques, 2012, 60(6): 1764-1783.
[3] MENEGHESSO G, VERZELLESI G, DANESIN F, et al. Reliability of GaN high-electron-mobility transistors: state of the art and perspectives ［J］. IEEE Transactions on Device & Materials Reliability, 2008, 8(2): 332-343.
[4] ROSS R L, SVENSSON S P, LUGLI P. Pseudomorphic HEMT technology and applications ［M］. Dordrecht: Kluwer Academic, 1996.
[5] WATANABE T, BOUBANGA-TOMBET S A, TANIMOTO Y, et al. InP-and GaAs-based plasmonic high-electron-mobility transistors for room-temperature ultrahigh-sensitive terahertz sensing and imaging ［J］. IEEE Sensors Journal , 2012, 13(1): 89-99.
[6] JONES E A, WANG F, OZPINECI B. Application-based review of GaN HFETs ［C］ // Proceedings of the 2014 IEEE Workshop on Wide Bandgap Power Devices and Applications. Knoxville, TN, USA. 2014:24-29.
[7] LEVINSON Y. Electron-electron scattering in a two-dimensional electron gas in a strong magnetic field ［J］. Physical Review. B, Condensed Matter, 1995, 51(23): 16898-16906.
[8] BUHMANN H, PREDEL H, MOLENKAMP L, et al. Spectroscopy of electron-electron scattering in a 2DEG ［J］. Physics-Uspekhi, 2001, 44(10S): 57.
[9] ROCCAFORTE F, GRECO G, FIORENZA P, et al. An overview of normally-off GaN-based high electron mobility transistors ［J］. Materials, 2019, 12(10): 1599.
[10] HE J, CHENG W C, WANG Q, et al. Recent advances in GaN-based power HEMT devices ［J］. Advanced Electronic Materials, 2021, 7(4): 2001045.
[12] BAKEROOT B, STOCKMAN A, POSTHUMA N, et al. Analytical model for the threshold voltage of p-AlGaN high-electron-mobility transistors ［J］. IEEE Transactions on Electron Devices, 2017, 65(1): 79-86.
[15] MICCOLI C, MARTINO V C, REINA S, et al. Trapping and thermal effects analysis for AlGaN/GaN HEMTs by means of TCAD simulations ［J］. IEEE Electron Device Letters, 2013, 34(9): 1121-1123.
[16] JOSHI V, TIWARI S P, SHRIVASTAVA M. Part II: proposals to independently engineer donor and acceptor trap concentrations in GaN buffer for ultrahigh breakdown AlGaN/GaN HEMTs ［J］. IEEE Transactions on Electron Devices, 2018, 66(1): 570-577.
