Bi 2 Cu 0.1 V 0.9 O 5.35-δ (BICUVOX.10) materials were prepared by chemical solution process, and the phases, surface morphology and electrical properties of the materials were studied. Our results show that the higher-conducting γ-phase of the BICUVOX.10 thin films is stabilized at room temperature. The BICUVOX.10 thin films deposited on LaNiO 3 /Si substrates are preferred (001) orientation and the mean grain size of the films is about 200 nm. The dielectric dispersion of the films may be originated from the short distance diffusion of oxygen vacancies in the low frequency region. The grain boundary dominates the conduction for the BICUVOX.10 thin films. The activation energy of oxygen ionic conduction in the BICUVOX.10 thin films is about 0.3 eV. The oxygen ionic conductivity is about 5×10-2 S·cm -1 .