DISTRIBUTION OF EFFECTIVE TEMPERATURE IN MICRO-PHOTOLUMINESCENCE MAPPING ON CdZnTe WAFER

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Journal of Infrared and Millimeter Waves >Volume 20 >Issue 3 >Page 233 > Article

Journal of Infrared and Millimeter Waves
Vol. 20, Issue 3, 233 (2001)

DISTRIBUTION OF EFFECTIVE TEMPERATURE IN MICRO-PHOTOLUMINESCENCE MAPPING ON CdZnTe WAFER

[in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]², [in Chinese]¹, [in Chinese]¹, [in Chinese]², and [in Chinese]¹

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¹[in Chinese]

²[in Chinese]

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. DISTRIBUTION OF EFFECTIVE TEMPERATURE IN MICRO-PHOTOLUMINESCENCE MAPPING ON CdZnTe WAFER[J]. Journal of Infrared and Millimeter Waves, 2001, 20(3): 233 Copy Citation Text

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References

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[2] Marzin J Y, Gerard J M, Izrael A,et al. Photoluminescence of single InAs quantum dots obtained by self-organized growth of GaAs,Phys.Rev.Lett.,1994,73: 716

[3] Bellessa J,Voliotic V,Grousson R,et al. High spatial resolution spectroscopy of a single V-shaped quantum wire, Appl. Phys.Lett.,1997,71: 2481

[4] Liu X Q,Lu W, Li Z F,et al. Spatially resolved luminescence investigation of AlGaAs/GaAs single quantum wire modified by selective implantation and annealing, Appl.Phys. Lett.,1999,75: 3339

[5] Yu P, Cardona M.Fundamentals of Semiconductors. Berlin: Springer-Verlag,1996:6

[7] Klingshirn C F. Semiconductor Optics.Berlin: Springer-Verlag,1959,156

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