• Journal of Inorganic Materials
  • Vol. 38, Issue 12, 1405 (2023)
Yicun LI1, Xiaobin HAO1, Bing DAI1,*, Dongyue WEN1..., Jiaqi ZHU1, Fangjuan GENG1, Weiping YUE2 and Weiqun LIN2,*|Show fewer author(s)
Author Affiliations
  • 11. School of Astronautics, Harbin Institute of Technology, Harbin 150000, China
  • 22. Shenzhen CSL Vacuum Science and Technology Co., LTD, Shenzhen 518000, China
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    DOI: 10.15541/jim20230164 Cite this Article
    Yicun LI, Xiaobin HAO, Bing DAI, Dongyue WEN, Jiaqi ZHU, Fangjuan GENG, Weiping YUE, Weiqun LIN. Optimization Design of MPCVD Single Crystal Diamond Growth Based on Plasma Diagnostics[J]. Journal of Inorganic Materials, 2023, 38(12): 1405 Copy Citation Text show less
    HITLH-2450M diamond growth system and plasma diagnostic system
    1. HITLH-2450M diamond growth system and plasma diagnostic system
    Pressure-microwave power parameter curves (a) and Hα intensity of plasma central region (b) under three matching modes
    2. Pressure-microwave power parameter curves (a) and Hα intensity of plasma central region (b) under three matching modes
    At a certain pressure, change of reflected power (a) and change of Hα intensity (b) with input power
    3. At a certain pressure, change of reflected power (a) and change of Hα intensity (b) with input power
    Atomic hydrogen concentration distributions in plasma at various observation parameter points under optimal absorption matching mode with similar distribution pattern changes in other modes
    4. Atomic hydrogen concentration distributions in plasma at various observation parameter points under optimal absorption matching mode with similar distribution pattern changes in other modes
    Quantitative analysis of plasma in uniform increase and optimal absorption matching mode
    5. Quantitative analysis of plasma in uniform increase and optimal absorption matching mode
    Changes in plasma major axis and minor axis (a), eccentricity (b), volume (c), and energy density (d) with input power under constant pressure with data at 16 kPa showing the selected display, and variation trends being similar under different pressures
    6. Changes in plasma major axis and minor axis (a), eccentricity (b), volume (c), and energy density (d) with input power under constant pressure with data at 16 kPa showing the selected display, and variation trends being similar under different pressures
    Prediction map of MPCVD single crystal diamond growth process
    7. Prediction map of MPCVD single crystal diamond growth process
    Photos of plasma growth environment of three samples (with Hα filter) and the surface optical micrographs after 10 h of growth
    8. Photos of plasma growth environment of three samples (with Hα filter) and the surface optical micrographs after 10 h of growth
    Plasma emission spectra in the growth of single crystal diamond
    9. Plasma emission spectra in the growth of single crystal diamond
    ParameterSample 1Sample 2Sample 3
    Preset growth temperature/℃850850850
    Preset major axis/mm484253
    Predicted pressure-microwave power14.2 kPa-3140 W15.6 kPa-2600 W12.8 kPa-3500 W
    Actual growth temperature/℃867860835
    Actual major axis/mm47.541.252.8
    Energy density/(W·cm-3)121.3148.5115.2
    Growth rate/(μm·h-1)8.58.98.2
    Table 1. Parameter points selection based on the predicted map and growth parameters of actual single crystal diamond
    Yicun LI, Xiaobin HAO, Bing DAI, Dongyue WEN, Jiaqi ZHU, Fangjuan GENG, Weiping YUE, Weiqun LIN. Optimization Design of MPCVD Single Crystal Diamond Growth Based on Plasma Diagnostics[J]. Journal of Inorganic Materials, 2023, 38(12): 1405
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