• Photonics Research
  • Vol. 12, Issue 9, 1858 (2024)
Yuanyuan Yue1, Yang Chen2,4,*, Jianhua Jiang1, Lin Yao1..., Haiyu Wang3, Shanli Zhang2, Yuping Jia2, Ke Jiang2, Xiaojuan Sun2,5,* and Dabing Li2,6,*|Show fewer author(s)
Author Affiliations
  • 1School of Management Science and Information Engineering, Jilin University of Finance and Economics, Changchun 130117, China
  • 2Key Laboratory of Luminescence Science and Technology, Chinese Academy of Sciences & State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
  • 3State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
  • 4e-mail: cheny@ciomp.ac.cn
  • 5e-mail: sunxj@ciomp.ac.cn
  • 6e-mail: lidb@ciomp.ac.cn
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    DOI: 10.1364/PRJ.524978 Cite this Article Set citation alerts
    Yuanyuan Yue, Yang Chen, Jianhua Jiang, Lin Yao, Haiyu Wang, Shanli Zhang, Yuping Jia, Ke Jiang, Xiaojuan Sun, Dabing Li, "Configuration design of a 2D graphene/3D AlGaN van der Waals junction for high-sensitivity and self-powered ultraviolet detection and imaging," Photonics Res. 12, 1858 (2024) Copy Citation Text show less
    Schematic diagrams and locally enlarged optical microscope images of as-fabricated photodetector structures with (a) Gr-only, (b) lateral Gr-AlGaN, and (c) vertical Gr-AlGaN junctions. The cross-sectional device configuration of the corresponding photodetector is shown in the top-right. (d)–(f) Raman mapping for E2 band intensity of AlGaN (at the top) and 2D band intensity of graphene (at the bottom), in which the measured region is marked by red dashed line in (a)–(c).
    Fig. 1. Schematic diagrams and locally enlarged optical microscope images of as-fabricated photodetector structures with (a) Gr-only, (b) lateral Gr-AlGaN, and (c) vertical Gr-AlGaN junctions. The cross-sectional device configuration of the corresponding photodetector is shown in the top-right. (d)–(f) Raman mapping for E2 band intensity of AlGaN (at the top) and 2D band intensity of graphene (at the bottom), in which the measured region is marked by red dashed line in (a)–(c).
    (a) Raman spectra of Gr-only, lateral Gr-AlGaN, and vertical Gr-AlGaN junctions for these designed photodetectors, which are extracted from their Raman mapping. (b) PL spectrum and (c) XRD rocking curve scanning of the AlGaN epilayer.
    Fig. 2. (a) Raman spectra of Gr-only, lateral Gr-AlGaN, and vertical Gr-AlGaN junctions for these designed photodetectors, which are extracted from their Raman mapping. (b) PL spectrum and (c) XRD rocking curve scanning of the AlGaN epilayer.
    (a)–(c) Logarithmic I–V curves of Gr-only, lateral Gr-AlGaN, and vertical Gr-AlGaN photodetectors working in dark (black line) and light (red line) conditions; the photocurrent is plotted as green lines. (d)–(f) I–V–T curves and (g)–(i) schematic diagrams of photocarrier transport behavior for these devices in (a)–(c).
    Fig. 3. (a)–(c) Logarithmic IV curves of Gr-only, lateral Gr-AlGaN, and vertical Gr-AlGaN photodetectors working in dark (black line) and light (red line) conditions; the photocurrent is plotted as green lines. (d)–(f) IVT curves and (g)–(i) schematic diagrams of photocarrier transport behavior for these devices in (a)–(c).
    (a) Spectral response and (b) dependence of responsivity and detectivity on light power density for lateral Gr-AlGaN and vertical Gr-AlGaN photodetectors.
    Fig. 4. (a) Spectral response and (b) dependence of responsivity and detectivity on light power density for lateral Gr-AlGaN and vertical Gr-AlGaN photodetectors.
    (a) Schematic diagram of the imaging test and (b) distribution of light and dark states for the 3×3 photodetector array. (c) External circuit connection for the vertical Gr-AlGaN and lateral Gr-AlGaN photodetectors. (d) Real imaging by the vertical Gr-AlGaN photodetector array at zero bias and (e) dependence on the light illumination time by the lateral Gr-AlGaN photodetector array at the bias voltage of 2 V.
    Fig. 5. (a) Schematic diagram of the imaging test and (b) distribution of light and dark states for the 3×3 photodetector array. (c) External circuit connection for the vertical Gr-AlGaN and lateral Gr-AlGaN photodetectors. (d) Real imaging by the vertical Gr-AlGaN photodetector array at zero bias and (e) dependence on the light illumination time by the lateral Gr-AlGaN photodetector array at the bias voltage of 2 V.
    (a) Optical microscope images of the entire lateral Gr-AlGaN and vertical Gr-AlGaN photodetectors. (b) Schematic plan-view of paired metal electrodes.
    Fig. 6. (a) Optical microscope images of the entire lateral Gr-AlGaN and vertical Gr-AlGaN photodetectors. (b) Schematic plan-view of paired metal electrodes.
    Energy band diagram of the Gr-AlGaN junction under the light illumination.
    Fig. 7. Energy band diagram of the Gr-AlGaN junction under the light illumination.
    (a) Power density-dependent I–V–T curves of lateral Gr-AlGaN and (b) vertical Gr-AlGaN photodetectors, working at a bias voltage of 2 V and 0 V, respectively.
    Fig. 8. (a) Power density-dependent IVT curves of lateral Gr-AlGaN and (b) vertical Gr-AlGaN photodetectors, working at a bias voltage of 2 V and 0 V, respectively.
    I–V–T curves of the lateral Gr-AlGaN photodetector (at zero bias) and vertical Gr-AlGaN photodetector (at 2 V).
    Fig. 9. IVT curves of the lateral Gr-AlGaN photodetector (at zero bias) and vertical Gr-AlGaN photodetector (at 2 V).
    PhotodetectorLight SourcePower (μW/cm2)Bias (V)τr/τf(s)R (A/W)D* (Jones)Ref.
    Lateral Gr-GaN NPs266 nm laser6.4×10450.122/0.1862×102[18]
    Lateral Gr-UID GaN261 nm laser0.4515/5.31.11×1029.79×108[20]
    Lateral Gr-SiO2-AlGaN-GaN310 nm light4—/—4.56.19×1011[26]
    Vertical Gr-n-GaN280 nm LED(2.0512.27)×10302.21×104/5.46×104105[29]
    Vertical Gr-p-GaN-AlGaN-GaN360 nm light1.96×103 −200.18/—20.91.91×1014[30]
    Vertical Gr-nanoporous GaN365 nm LED0.77 −41.22×105/1.46×1051.01×1047.84×1014[31]
    Vertical Gr-h-BN-n-AlGaN280 nm light16.151.42/0.133.631.76×1012[33]
    Lateral Gr-AlGaNXenon lamp78.923.54/1.311.27×1043.88×1012This work
    Vertical Gr-AlGaN00.07/0.22.61×1021.34×1011
    Table 1. Comparison of Photodetector Performance for Those Based on Gr-(Al)GaN Junctions
    Yuanyuan Yue, Yang Chen, Jianhua Jiang, Lin Yao, Haiyu Wang, Shanli Zhang, Yuping Jia, Ke Jiang, Xiaojuan Sun, Dabing Li, "Configuration design of a 2D graphene/3D AlGaN van der Waals junction for high-sensitivity and self-powered ultraviolet detection and imaging," Photonics Res. 12, 1858 (2024)
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