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Journal of Inorganic Materials
Vol. 38, Issue 3, 228 (2023)

Research Progress of ScAlMgO₄ Crystal: a Novel GaN and ZnO Substrate

Chaoyi ZHANG¹, Huili TANG^1,*, Xianke LI¹, Qingguo WANG¹..., Ping LUO¹, Feng WU¹, Chenbo ZHANG¹, Yanyan XUE¹, Jun XU^1,*, Jianfeng HAN² and Zhanwen LU²|Show fewer author(s)

Author Affiliations

¹1. MOE Key Laboratory of Advanced Micro-Structured Materials, School of Physics Science and Engineering, Tongji University, Shanghai 200092, China

²2. Linton Kayex Technology Co., Ltd., Wuxi 214000, China

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DOI: 10.15541/jim20220620 Cite this Article

Chaoyi ZHANG, Huili TANG, Xianke LI, Qingguo WANG, Ping LUO, Feng WU, Chenbo ZHANG, Yanyan XUE, Jun XU, Jianfeng HAN, Zhanwen LU. Research Progress of ScAlMgO₄ Crystal: a Novel GaN and ZnO Substrate [J]. Journal of Inorganic Materials, 2023, 38(3): 228 Copy Citation Text

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Crystal structure of SCAM (a) and [ScO6] octahedran and [Al/MgO5] trigonal bipyramid (b)

1. Crystal structure of SCAM (a) and [ScO₆] octahedran and [Al/MgO₅] trigonal bipyramid (b)

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Two types of trigonal bipyramid coordination in (RAO3)n(MO)m compounds[11]

2. Two types of trigonal bipyramid coordination in (RAO₃)_n(MO)_m compounds^[11]

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3. Electrical properties of SCAM^[21]

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4. Thermal properties of SCAM^[37]

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5. Optical properties of SCAM^[9]

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6. XRD patterns of products from SCAM powders sintered at 1670 K for 168 h^[45]

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7. SCAM single crystal grown by Cz method^[38]

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8. SCAM single crystal with various diameters grown by Cz method^[48]

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9. Dislocation analysis of SCAM crystal grown by Fukuda laboratory^[50]

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10. Crystal structural of GaN

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11. SCAM substrate reuse process^[58]

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12. AFM images of the ~300 nm-thick GaN epitaxial films grown on SCAM substrates with different laser repetition rates^[85]

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13. GaN epitaxial films grown on SCAM substrate annealed under different atmospheres^[86]

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14. Crystal structural diagram of ZnO

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15. ZnO films grown by laser-MBE on SCAM substrate^[65]

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Crystal		GaN	Sapphire	6H-SiC	Si	GaAs	SCAM
Space group		$\text{P}{{6}_{3}}\text{mc}$	$R \bar{3} c$	$P 6_{3} mc$	$Fd \bar{3} m$	$F \bar{4} 3 m$	$R \bar{3} m$
Lattice parameters		a=b=0.319 nmc=0.519 nmα=β=90°γ=120°	a=b=0.476 nmc=1.299 nmα=β=90°γ=120°	a=b=0.307 nmc=1.508 nmα=β=90°γ=120°	a=b=c=0.543 nmα=β=γ=90°	a=b=c=0.565 nmα=β=γ=90°	a=b=0.324 nmc=2.515 nmα=β=90°γ=120°
Lattice mismatch, $Δ a / α$	GaN	0	16%^[61]	3.3%^[61]	16%^[62]	20%^[63]	1.4%^[5]
Lattice mismatch, $Δ a / α$	ZnO	2.2%^[64]	18%^[65]	5.8%^[66]	16.6%^[67]	22%^[64]	0.09%^[6]
Thermal expansion coefficient, α (~300 K)/(×10^-6, K^-1)		α_a=3.43α_c=3.34^[36]	α_a=7.5α_c=8.5^[68]	α_a=3.2α_c=3.1^[69]	α=2.55^[70]	α=5.73^[71]	α_a=5.59α_c=10.2^[37]
Melting point/K		2770^[54]	2326^[72]	3100^[69]	1680^[73]	1500^[74]	2220^[38]
Thermal conductivity, λ (~300 K)/(W·cm^-1·K^-1)		λ_c=2.2^[75]	λ_c=0.23^[68]	λ_c=4.3^[76]	λ=1.3^[77]	λ=0.55^[78]	λ_c=0.062^[50]
Growth methods		HVPE MOCVD	Cz, KY, EFG	PVT	Cz	LEC, VB	Cz
Cost		High	Medium	High	Low	Low	Low

Table 1. Common substrates for GaN and ZnO epitaxial layers

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Chaoyi ZHANG, Huili TANG, Xianke LI, Qingguo WANG, Ping LUO, Feng WU, Chenbo ZHANG, Yanyan XUE, Jun XU, Jianfeng HAN, Zhanwen LU. Research Progress of ScAlMgO₄ Crystal: a Novel GaN and ZnO Substrate [J]. Journal of Inorganic Materials, 2023, 38(3): 228

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