• Acta Photonica Sinica
  • Vol. 34, Issue 8, 1187 (2005)
[in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
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  • [in Chinese]
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    DOI: Cite this Article
    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Antireflective Thin Film Design Using ITO Material[J]. Acta Photonica Sinica, 2005, 34(8): 1187 Copy Citation Text show less

    Abstract

    Usually, ITO transparent conductive thin film is made up of only one layer of ITO material with the mean transmittance of nearly 90% in the visible region of the spectrum. The results of using two different new design to produce antireflective film with ITO and deposition them by RLVIP technique are discussed.The mean optical transmittance of thin film of T= 95.83%、the maximum transmittance of T_ max=97.26% and the sheet resistance of R_□=13.2~24.6Ω/□ are achieved by the design in experiments.
    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Antireflective Thin Film Design Using ITO Material[J]. Acta Photonica Sinica, 2005, 34(8): 1187
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