• Journal of Infrared and Millimeter Waves
  • Vol. 34, Issue 3, 347 (2015)
TANG Hua-Jie, ZHANG Jin-Min*, JIN Hao, SHAO Fei, HU Wei-Qian, and XIE Quan
Author Affiliations
  • [in Chinese]
  • show less
    DOI: 10.3724/sp.j.1010.2015.03.015 Cite this Article
    TANG Hua-Jie, ZHANG Jin-Min, JIN Hao, SHAO Fei, HU Wei-Qian, XIE Quan. Influence of sputtering pressures on the optical properties of manganese film based on spectroscopic ellipsometry[J]. Journal of Infrared and Millimeter Waves, 2015, 34(3): 347 Copy Citation Text show less
    References

    [1] Udono H, Nakamori K, Takahashi Y, et al. Solution Growth and Thermoelectric Properties of Single-Phase MnSi1.75-x[J]. Journal of electronic materials. 2011, 40(5): 1165-1170.

    [2] Rebien M, Henrion W, Angermann H, et al. Interband optical properties of higher manganese silicide thin films[J]. Applied physics letters. 2002, 81(4): 649-651.

    [3] Lange H, Henrion W, Fenske F, et al. Optical interband properties of some semiconducting silicides[J]. physica status solidi(b). 1996, 194(1): 231-240.

    [4] Hou Q R, Zhao W, Chen Y B, et al. Preparation of n-type nano-scale MnSi1.7 films by addition of iron[J]. Materials Chemistry and Physics. 2010, 121(1): 103-108.

    [5] Zhou A J, Zhao X B, Zhu T J, et al. Composites of higher manganese silicides and nanostructured secondary phases and their thermoelectric properties[J]. Journal of electronic materials. 2009, 38(7): 1072-1077.

    [6] Kamilov T S, Khusanov A Z, Bakhadyrkhanov M K, et al. Nonselective polycrystalline radiation detectors based on higher manganese silicides[J]. Technical Physics Letters. 2002, 28(11): 929-931.

    [7] Shukurova D M, Orekhov A S, Sharipov B Z, et al. Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M photodiodes[J]. Technical Physics. 2011, 56(10): 1423-1428.

    [8] Naito M, Nakanishi R, Machida N, et al. Growth of higher manganese silicides from amorphous manganese—silicon layers synthesized by ion implantation[J]. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 2012, 272: 446-449.

    [9] Hou Q R, Zhao W, Chen Y B, et al. Preparation of n-type higher manganese silicide films by magnetron sputtering[J]. International Journal of Modern Physics B. 2009, 23(16): 3331-3348.

    [11] Anooz S B, Schwarzkopf J, Petrik P, et al. Optical constants of MOCVD-grown Aurivillius phases in the Bi4Ti3O12-Na0.5Bi0.5TiO3 system measured by spectroscopic ellipsometry[J]. Applied Physics A. 2011, 105(1): 81-88.

    [13] Keita A, Naciri A E, Delachat F, et al. Spectroscopic ellipsometry investigation of the optical properties of optical properties of nanostructured Si/SiNx films[J]. Journal of Applied Physics. 2010, 107(9): 93516-93524.

    [14] Jellison G E, Modine F A. Parameterization of the optical functions of amorphous materials in the interband region[J]. Applied Physics Letters. 1996, 69(3): 371-373.

    [17] Wronkowska A A, Wronkowski A, Kukli N Ski K, et al. Spectroscopic ellipsometry study of the dielectric response of Au—In and Ag—Sn thin-film couples[J]. Applied Surface Science. 2010, 256(15): 4839-4844.

    [18] Johnson P B, Christy R. Optical constants of the noble metals[J]. Physical Review B. 1972, 6(12): 4370-4379.

    [19] Fujiwara H, Koh J, Rovira P I, et al. Assessment of effective-medium theories in the analysis of nucleation and microscopic surface roughness evolution for semiconductor thin films[J]. Physical Review B. 2000, 61(16): 10832-10844.

    [20] Aspnes D E, Studna A A. Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0eV[J]. Physical Review B. 1983, 27(2): 985-1009.

    [21] Johnson P B, Christy R W. Optical constants of transition metals: Ti, V, Cr, Mn, Fe, Co, Ni, and Pd [J]. Physical Review B. 1974, 9(12): 5056-5070.

    TANG Hua-Jie, ZHANG Jin-Min, JIN Hao, SHAO Fei, HU Wei-Qian, XIE Quan. Influence of sputtering pressures on the optical properties of manganese film based on spectroscopic ellipsometry[J]. Journal of Infrared and Millimeter Waves, 2015, 34(3): 347
    Download Citation