Optical properties of Hg1-xMnxTe

[in Chinese]; [in Chinese]; [in Chinese]

[1] BECLA P.Infrared photovoltaic detectors utilizing Hg1-xMnxTe and Hg1-xCdxTe alloys[J].J Vac Sci Technol,1986,4(4):2014-2018.

[2] TRIBOULET A.Alternative small gap materials for IR detection[J].Semicond Sci Technol,1990,5:1073-1079

[3] PANKOV J I.Optical Processes in Semiconductors[M].New Jersey:Prentice-hall Inc,1971.

[4] BLUE M D.Optical absorption in HgTe and HgCdTe[J].Phys Rev,1964,134:226-234.

[5] KANA E O.Band structure of indium antimanide[J].J Phys Chem Solids,1957,1:249-261.

[6] BARANSKY P I,BELYAGEV A E,BODNARUK O O,et al.Transport phenomena and recombination in Hg1-xMnxTe alloys (x～0.1)[J].Semiconductors,1990,24:1490-1493.

[7] MOSS T S,BURRELL G J,ELLIS B.Semiconductor Optoelectronics[M].London:Butterworth CoPublishers,1973.

[8] VLASENKO A I,VLASENKO Z K,LYUBCHENKO A V.Photoconducitivity spectra of CdHgTe crystals with photoactive inclusions[J].Semiconductors,1999,33(1):47-51.

[9] PIOTR OWSKI T.Photoluminescence studies of Hg1-xMnxTe crystals[J].Acta Physica Polonia,1990,77(1):195-198.

[10] ROGLSKI A.The performance of Hg1-xMnxTe photodiodes[J].Infrared Phys,1991,31(2):117-166.