Nd:LuVO4/Cr:YAG Microchip Pulsed Laser

Liao Mingdun; Lan Ruijun; Wang Zhengping; Yu Haohai; Zhang Huaijin; Chen Lijuan; Zhuang Shidong; Guo Lei; Zhao Yongguang; Wang Jiyang; Xu Xinguang

doi:10.3788/aos201030.s100509

Journals >Acta Optica Sinica >Volume 30 >Issue s1 >Page 100509 > Article

Acta Optica Sinica
Vol. 30, Issue s1, 100509 (2010)

Liao Mingdun^1、*, Lan Ruijun^1、2, Wang Zhengping¹, Yu Haohai¹, Zhang Huaijin¹, Chen Lijuan¹, Zhuang Shidong¹, Guo Lei¹, Zhao Yongguang¹, Wang Jiyang¹, and Xu Xinguang¹

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¹[in Chinese]

²[in Chinese]

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DOI: 10.3788/aos201030.s100509 Cite this Article Set citation alerts

Liao Mingdun, Lan Ruijun, Wang Zhengping, Yu Haohai, Zhang Huaijin, Chen Lijuan, Zhuang Shidong, Guo Lei, Zhao Yongguang, Wang Jiyang, Xu Xinguang. Nd:LuVO₄/Cr:YAG Microchip Pulsed Laser[J]. Acta Optica Sinica, 2010, 30(s1): 100509 Copy Citation Text

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Abstract

With Cr:YAG as saturable absorber and output coupler, passively Q-switched microchip laser was obtained for laser diode (LD) end-pumped Nd:LuVO4 crystal. When the pump power was 13.86 W, a maximum average output power of 0.508 W was obtained, corresponding to an optical conversion efficiency of 3.6%, and a slope efficiency of 8.3%. The highest repetition rate, largest pulse energy and shortest pulse width were measured to be 23.95 kHz, 21.21 μJ, and 4.5 ns, respectively, corresponding to a peak power of 4.71 kW.

Keywords

Cr:YAG lasers microchip Nd:LuVO4 crystal passively Q-switched

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