Effects of gain nonlinearities in an optically injected gain lever semiconductor laser

J. M. Sarraute; K. Schires; S. LaRochelle; F. Grillot

doi:10.1364/PRJ.5.000315

Journals >Photonics Research >Volume 5 >Issue 4 >Page 315 > Article

Photonics Research
Vol. 5, Issue 4, 315 (2017)

Effects of gain nonlinearities in an optically injected gain lever semiconductor laser | On the Cover

J. M. Sarraute^1、2、*, K. Schires¹, S. LaRochelle², and F. Grillot^1、3

Author Affiliations

¹LTCI, Télécom Paristech, Université Paris-Saclay, 46 rue Barrault, 75013 Paris, France

²COPL, Université Laval, 2375 rue de la Terrasse, Québec, Québec G1V 06A, Canada

³Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106-4343, USA

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DOI: 10.1364/PRJ.5.000315 Cite this Article Set citation alerts

J. M. Sarraute, K. Schires, S. LaRochelle, F. Grillot. Effects of gain nonlinearities in an optically injected gain lever semiconductor laser[J]. Photonics Research, 2017, 5(4): 315 Copy Citation Text

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(a) Schematic of the two-section GL laser (framed by black dotted square). Evolution of the material gain with the carrier density in both sections (left). Ga,b′ are the differential gains in each section. (b) Schematic of the OIL configuration.

Fig. 1. (a) Schematic of the two-section GL laser (framed by black dotted square). Evolution of the material gain with the carrier density in both sections (left). Ga,b′ are the differential gains in each section. (b) Schematic of the OIL configuration.

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Fig. 2. MTF of the free-running laser without GL calculated from 5 for ϵ=0,5×10−17,10−16,and 5×10−16 cm3.

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Fig. 3. MTF of the OIGL laser calculated from 3 for different values of gain compression ϵ=0,10−17,5×10−17,and 10−16 cm3 and with a GL of g=10. The injected power and frequency detuning are (a) K=3.5,Δf/fR=0.97 and (b) K=8,Δf/fR=3.3. Red dotted curves represent the MTF for the free-running case assuming no compression and without GL.

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Fig. 4. 3 dB bandwidth in the stable-locking region of the OIGL laser with g=10 and ϵ=10−16 cm3.

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Fig. 5. Evolution of the 3 dB bandwidth with respect to GL strength and gain compression factor for (a) K=0 and (b) K=8.

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Simulation parameters	Symbols	Value
Cavity volume	$V$	$2 \times 10^{- 17} m^{3}$
Bias current	$I_{a / b}$	$18 / 1.8 mA$
Steady-state optical gain	$G_{0, b}$	$1.8 \times 10^{13} s^{- 1}$
Optical confinement	$Γ$	0.032
Transparency carrier density	$N_{tr}$	$1.8 \times 10^{24} m^{- 3}$
Fitting parameter	$N_{s}$	$- 0.4 \times 10^{24} m^{- 3}$
Carrier lifetime	$τ_{c}$	$1.57 \times 10^{- 9} s$
Photon lifetime	$τ_{p}$	$2.77 \times 10^{- 12} s$
Linewidth enhancement factor	$α_{H}$	2
Coupling S-M factor	$k_{c}$	$1 \times 10^{11} s^{- 1}$
Damping rate ratio	$g$	1.15–10
Injection strength	$K$	−15 to +10 dB
Gain compression factor	$ϵ$	$0 - 5 \times 10^{- 16} {cm}^{3}$
Spontaneous emission factor	$β$	$10^{- 5}$

Table 1. Material and Laser Parameters

J. M. Sarraute, K. Schires, S. LaRochelle, F. Grillot. Effects of gain nonlinearities in an optically injected gain lever semiconductor laser[J]. Photonics Research, 2017, 5(4): 315

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