• Journal of Infrared and Millimeter Waves
  • Vol. 21, Issue 1, 71 (2002)
[in Chinese] and [in Chinese]
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  • [in Chinese]
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    DOI: Cite this Article
    [in Chinese], [in Chinese]. THEORETICAL CALCULATION OF DOPING OPTIMIZATION FOR p-on-n HgCdTe PHOTODIODE[J]. Journal of Infrared and Millimeter Waves, 2002, 21(1): 71 Copy Citation Text show less
    References

    [2] Willardson R K, Beer A C. Semiconductors and Semimetals. New York: Academic Press, 1981, 18:229

    [3] Rogalski A, Ciupa R. Long-wavelength HgCdTe photodiodes: n-on-p versus p-on-n structures. J.Appl.Phys., 1995, 77:3505

    [4] Cappper P. Properties of Narrow Gap Cadmium-based Compounds EMIS. London:IEE Inspec., 1994,1

    [in Chinese], [in Chinese]. THEORETICAL CALCULATION OF DOPING OPTIMIZATION FOR p-on-n HgCdTe PHOTODIODE[J]. Journal of Infrared and Millimeter Waves, 2002, 21(1): 71
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