• Infrared and Laser Engineering
  • Vol. 35, Issue 3, 302 (2006)
[in Chinese]*, [in Chinese], and [in Chinese]
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    [in Chinese], [in Chinese], [in Chinese]. High-power semiconductor lasers with small divergence[J]. Infrared and Laser Engineering, 2006, 35(3): 302 Copy Citation Text show less
    References

    [3] OHKUBO M,NAMIKI S,IJICHI T,et al.0.98μm InGaAs-InGaAsPInGaP GRIN-SCH SL-SQW lasers for coupling high optical power into single-mode fiber[J].IEEE J Quantum Electronics,1993,29(6):1932-1935.

    [4] ZHANG G.High power and high efficiency operation of Al-free InGaAs/InGaAsP InGaP GRINSCH SQW laser[J].Electron Lett,1994,30:1230-1232.

    [5] ASONEN H,OVTCHINNIKV A,ZHANG G,et al.Aluminum-free 980 nm GaInAs/GaInAsP/GaInP pump lasers[J].IEEE J Quantum Electronics,1994,30:415-423.

    [6] XU Zun-tu,ZHANG Jing-ming,MA Xiao-yu,et al.High efficiency low vertical divergence angle 980nm Al-free active region lasers with novel large optical cavity and asymmetrical cladding layers[C]//Proceedings of SPIE,In-Plane Semiconductor Lasers Ⅳ,2000,3947:66-69.

    [7] GAO Wei,XU Zun-tu,NELSON A.Low-divergence high-power 980 nm single-mode diode lasers with asymmetric epitaxial struture[C]//Proceedings of SPIE,Materials and Devices for Optical and Wireless Communications,2002,4905:154-156.

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    [in Chinese], [in Chinese], [in Chinese]. High-power semiconductor lasers with small divergence[J]. Infrared and Laser Engineering, 2006, 35(3): 302
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