The Lumogen as a low-cost organic material is deposited on the surface of the CMOS imaging sensor using a vacuum thermal evaporation system. The constant dark current noise of the CMOS is shown that no damage to the CMOS is caused in the process of the depositing film. The photo response nonuniformity is increased while the dynamic range is decreased with the argument of the Lumogen-film thickness. Furthermore, the quantum efficiency is increased firstly and then decreased and reach to the optimum 10% when the thickness of the Lumogen film is 389 nm. Meanwhile, the photo response nonuniformity and dynamic range are in a relatively good condition.