Qinqin Sun, Shihao Huang. Calculation of Conduction Band Structure Tensile Strained Ge1-xSnx Alloys for Achieving Direct Band Gap Materials[J]. Laser & Optoelectronics Progress, 2020, 57(9): 091602
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- Laser & Optoelectronics Progress
- Vol. 57, Issue 9, 091602 (2020)
Fig. 1. Various strain components as a function of in-plane strain. (a) Biaxial tensile strain paralleled to the (001) plane; (b) biaxial tensile strain paralleled to the (110) plane; (c) biaxial tensile strain paralleled to the (111) plane; (d) uniaxial tensile strain paralleled to the [001] direction; (e) uniaxial tensile strain paralleled to the [110] direction; (f) uniaxial tensile strain paralleled to the [111] direction
Fig. 2. Changes in the bandgaps of Ge0.97Sn0.03 with various type of strains. (a) Biaxial tensile strain paralleled to the (001) plane; (b) biaxial tensile strain paralleled to the (110) plane; (c) biaxial tensile strain paralleled to the (111) plane
Fig. 3. Energy separation between the direct and indirect conduction band minima in Ge1-xSnx as a function of strain and Sn composition with various type of strains. (a) Biaxial tensile strain paralleled to the (001) plane; (b) biaxial tensile strain paralleled to the (110) plane; (c) biaxial tensile strain paralleled to the (111) plane
Fig. 4. Changes in the bandgaps of Ge0.97Sn0.03 with various type of strains. (a) Uniaxial tensile strain paralleled to the [001] direction; (b) uniaxial tensile strain paralleled to the [110] direction; (c) uniaxial tensile strain paralleled to the [111] direction
Fig. 5. Energy separation between the direct and indirect conduction band minima in Ge1-xSnx as a function of strain and Sn composition with various type of strains. (a) Uniaxial tensile strain paralleled to the [001] direction; (b) uniaxial tensile strain paralleled to the [110] direction; (c) uniaxial tensile strain paralleled to the [111] direction
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Table 2. Critical strains for Ge under biaxial and uniaxial tension strain where the indirect-to-direct band-gap transition occurs
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