• Chinese Journal of Lasers
  • Vol. 45, Issue 9, 901005 (2018)
Huang Shushan1、2, Zhang Yu1、2, Yang Cheng′ao1、2, Xie Shengwen1、2, Xu Yingqiang1、3, Ni Haiqiao1、2, and Niu Zhichuan1、2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    DOI: 10.3788/CJL201845.0901005 Cite this Article Set citation alerts
    Huang Shushan, Zhang Yu, Yang Cheng′ao, Xie Shengwen, Xu Yingqiang, Ni Haiqiao, Niu Zhichuan. Performance Improvement of 2.0 μm GaSb Laser Diode by Facet Coating[J]. Chinese Journal of Lasers, 2018, 45(9): 901005 Copy Citation Text show less
    Reflectivity of antireflection film versus wavelength
    Fig. 1. Reflectivity of antireflection film versus wavelength
    Reflectivity of high-reflection film versus wavelength
    Fig. 2. Reflectivity of high-reflection film versus wavelength
    L-I-V-WPE curves of uncoated laser under room-temperature
    Fig. 3. L-I-V-WPE curves of uncoated laser under room-temperature
    Emission spectrum versus injection current of uncoated laser under room temperature
    Fig. 4. Emission spectrum versus injection current of uncoated laser under room temperature
    L-I-V-WPE curves of coated laser under room temperature
    Fig. 5. L-I-V-WPE curves of coated laser under room temperature
    L-I-WPE curves of coated and uncoated lasers
    Fig. 6. L-I-WPE curves of coated and uncoated lasers
    ParameterUncoatedlaserCoatedlaser
    Maximum WPE /%8.315.6
    Threshold current /A0.400.15
    Output power at 2.0 A /mW192304
    Table 1. Performance comparison of lasers
    Huang Shushan, Zhang Yu, Yang Cheng′ao, Xie Shengwen, Xu Yingqiang, Ni Haiqiao, Niu Zhichuan. Performance Improvement of 2.0 μm GaSb Laser Diode by Facet Coating[J]. Chinese Journal of Lasers, 2018, 45(9): 901005
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