• Chinese Journal of Lasers
  • Vol. 45, Issue 9, 901005 (2018)
Huang Shushan1、2, Zhang Yu1、2, Yang Cheng′ao1、2, Xie Shengwen1、2, Xu Yingqiang1、3, Ni Haiqiao1、2, and Niu Zhichuan1、2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    DOI: 10.3788/CJL201845.0901005 Cite this Article Set citation alerts
    Huang Shushan, Zhang Yu, Yang Cheng′ao, Xie Shengwen, Xu Yingqiang, Ni Haiqiao, Niu Zhichuan. Performance Improvement of 2.0 μm GaSb Laser Diode by Facet Coating[J]. Chinese Journal of Lasers, 2018, 45(9): 901005 Copy Citation Text show less

    Abstract

    The coated laser with a high performance is fabricated based on the InGaSb/AlGaAsSb material system, and simultaneously the laser without facet coating is also fabricated for a performance comparison. The laser without facet coating working in the continuous-wave (CW) mode and under room temperature (RT) shows an output power of up to 300 mW at the injection current of 3.0 A and the maximum wall plug efficiency (WPE) is 8.3%. The laser with facet coating working in the CW mode and also under RT exhibits an output power of up to 380 mW at the injection current of 2.6 A and the maximum WPE is 15.6%. The WPE of the coated laser is always above 10.0% and the emission wavelength is around 2.0 μm at the injection current range of 0.3-2.4 A.
    Huang Shushan, Zhang Yu, Yang Cheng′ao, Xie Shengwen, Xu Yingqiang, Ni Haiqiao, Niu Zhichuan. Performance Improvement of 2.0 μm GaSb Laser Diode by Facet Coating[J]. Chinese Journal of Lasers, 2018, 45(9): 901005
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