ACorrelation between polycrystalline based solar cell conversion efficiency and crystallization defects

ZHANG Ying-Bin; XIONG Zhen; CHEN Yi-Feng; FENG Zhi-Qiang; YANG Ping-Xiong; CHU Jun-Hao

doi:10.11972/j.issn.1001-9014.2015.05.007

[1] BERTONI M, COLIN C, BUONASSISI T. Dislocation Engineering in Multicrystalline Silicon [J], Solid State Phenomena, 2010, 156-158:11-18.

[2] YANG De-Ren. Characterization and analysis of semiconductor materials [M], Beijing: Science Press, 2010.

[3] MACDONALD D, GEERLIGS L J. Recombination activity of interstitial iron and other transition metal point defects in p-and n-type crystalline silicon [J], Applied Physics Letters, 2004, 85(18): 4061-4063.

[4] BUONASSISI T, ISTRATOV A A, PICKETT M D, et al. Metal precipitation at grain boundaries in silicon: Dependence on grain boundary character and dislocation decoration [J]. Applied Physics Letters, 2006, 89(4): 042102.

[5] BUONASSISI T, ISTRATOV A A, MARCUS M A, et al. Engineering metal-impurity nanodefects for low-cost solar cells [J], Nature Materials, 2005, 4(9): 676-679.

[6] HOFSTETTER J, FENNING D P, LELI VRE J-F,et al. Engineering metal precipitate size distributions to enhance gettering in multicrystalline silicon [J], Physica Status Solidi (a), 2012, 209(10): 1861-1865.

[7] GAO B, KAKIMOTO K. Dislocation-density-based modeling of the plastic behavior of 4H-SiC single crystals using the Alexander-Haasen model [J], Journal of Crystal Growth, 2014, 386(0): 215-219.

[8] GAO B, KAKIMOTO K. Relationship between the locations of activated dislocations and the cooling flux direction in monocrystalline-like silicon grown in the and directions [J]. Journal of Applied Crystallography, 2013, 46(6): 1771-1780.

[9] MITCHELL B. Predicting solar cell efficiencies from bulk lifetime image of multicrystalline silicon bricks, 3rd SiliconPV, 2013 [C], Hamelin, 2000.

[10] LIU A Y, MACDONALD D. Precipitation of iron in multicrystalline silicon during annealing [J], Journal of Applied Physics, 2014, 115(11): 114901.

[11] MACDONALD D H, GEERLIGS L J, AZZIZI A. Iron detection in crystalline silicon by carrier lifetime measurements for arbitrary injection and doping [J], Journal of Applied Physics, 2004, 95(3): 1021-1028.

[12] CHEN J, YANG D, WANG X, et al. Aluminum gettering in photovoltaic silicon [J], The European Physical Journal-Applied Physics, 2004, 27(1-3): 119-122.

[13] PLETZER T M, STEGEMANN E F R, WINDGASSEN H, et al. Gettering in multicrystalline silicon wafers with screen-printed emitters [J]. Progress in Photovoltaics: Research and Applications, 2011, 19(8): 946-953.

[14] FU Shao-Yong, XIONG Zhen, FENG Zhi-Qiang, et al. Cell Performance Prediction based on the Wafer Quality [J]. Energy Procedia, 2013, 38(0): 43-48.

[15] HUDELSON S, NEWMAN B K, BERNARDIS S, et al. Retrograde Melting and Internal Liquid Gettering in Silicon [J], Advanced Materials, 2010, 22(35): 3948-3953.

[16] DAVIS J R, ROHATGI A, HOPKINS R H, et al, Impurities in silicon solar cells [J], IEEE Trans. Electron Devices, 1980, 27(4): 677-687.

[17] MACDONALD D, CUEVAS A, KINOMURA A, et al. Transition-metal profiles in a multicrystalline silicon ingot [J], Journal of Applied Physics, 2005, 97: 033523.

[18] GREEN M A, Silicon solar cells [M], Sydney: Centre for Photovoltaic Devices and Systems, 1995: 191.

[19] XIONG Zhen, ZHANG Chi, FU Shao-Yong, et al. Correlation of Micro-Defects and Cell Performance in Crystalline Silicon-Based Solar Cell: 26th European Photovoltaic Solar Energy Conference and Exhibition, 2011[C], Hamburg: 2011: 1191-1194.

[20] SCHULTZ O, GLUNZ S W, WILLEKE G P. Multicrystalline silicon solar cells exceeding 20% efficiency [J], Progress in Photovoltaics: Research and Applications, 2004, 12(7):553-558.