• Infrared and Laser Engineering
  • Vol. 48, Issue 3, 320001 (2019)
An Heng, Zhang Chenguang, Yang Shengsheng, Xue Yuxiong, Wang Guangyi, and Wang Jun
Author Affiliations
  • [in Chinese]
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    DOI: 10.3788/irla201948.0320001 Cite this Article
    An Heng, Zhang Chenguang, Yang Shengsheng, Xue Yuxiong, Wang Guangyi, Wang Jun. Investigation of single event transients on SiGe BiCMOS linear devices with pulsed laser[J]. Infrared and Laser Engineering, 2019, 48(3): 320001 Copy Citation Text show less
    References

    [1] Li Hongzheng. Discussion of SiGe BiCMOS technology process integration[J]. Electronics and Packaging, 2012, 15(12): 34-37. (in Chinese)

    [2] Rao J B L, Mital R, Patel D P, et al. Low-cost phased array antenna for satellite communications on mobile earth stations[C]//IEEE International Symposium on Phased Array Systems & Technology, 2013: 214-219.

    [3] Zhang Jinxin, Guo Hongxia, Wen Lin, et al. Influencing factors of SiGe heterojunction bipolar transistor single-event effect in laser microbeam simulation test[J]. High Power Laser and Particle Beams, 2013, 25(9): 2433-2438.

    [4] Cao Zhou, Xue Yuxiong, Yang Shiyu, et al. Laser simulation of single event effects[J]. Vacuum and Cryogenics, 2006, 12(3): 166-172. (in Chinese)

    [5] Chugg A, Jones R, Moutrie M, et al. Probing the charge-collection sensitivity profile using a picosecond pulsed laser at a range of wavelength[J]. IEEE Transactions on Nuclear Science, 2002, 49(6): 2969-2976.

    [6] Buchner Stephen P, Florent Miller, Vincent Pouget, et al. Pulsed-laser testing for single-event effects investigations[J]. IEEE Transactions on Nuclear Science, 2013, 60(3): 1852-1875.

    [7] Pease R L, Sternberg A L, Boulghassoul Y, et al. Comparison of SET′s in bipolar linear circuits generated with an ion microbeam, laser light and circuit simulation[J]. IEEE Transactions on Nuclear Science, 2002, 49(6): 3163-3170.

    [8] Wang Dekun, Cao Zhou, Liu Hainan, et al. Backside piuse laser testing for single event effect[J]. Atomic Energy Science and Technology, 2011, 45(7): 884-887.(in Chinese)

    [9] Egorov A N, Chumakov A I, Mavritskiy O B, et al. Femtosecond laser simulation facility for SEE IC testing[C]// 2014 IEEE Radiation Effects Data Workshop Record, 2014: 247-250.

    [10] Gordienko A V, Mavritskii O B, Egorov A N, et al. Correlation of the ionisation response at selected points of IC sensitive regions with SEE sensitivity parameters under pulsed laser irradiation[J]. Quantum Electronics, 2014, 44(12): 1173-1178.

    [11] Armstrong S E, Loveless T D, Hicks J R, et al. Phase-dependent single-event sensitivity analysis of high-speed A/MS circuits extracted from asynchronous measurements[J]. IEEE Transactions on Nuclear Science, 2010, 58(6): 1066-1071.

    [12] Wang Hongbo, Li Qin. Radiation effects and protection technology for optical componentsof fiber optic gyroscope[J]. Infrared and Laser Engineering, 2015, 44(2): 682-687. (in Chinese)

    [13] Zhang Hao, Wang Xinsheng, Li Bo, et al. Research on single event latchup protection technology for micro-satellite[J]. Infrared and Laser Engineering, 2015, 44(5): 1444-1449. (in Chinese)

    An Heng, Zhang Chenguang, Yang Shengsheng, Xue Yuxiong, Wang Guangyi, Wang Jun. Investigation of single event transients on SiGe BiCMOS linear devices with pulsed laser[J]. Infrared and Laser Engineering, 2019, 48(3): 320001
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