• Acta Optica Sinica
  • Vol. 42, Issue 17, 1716001 (2022)
Zhizhen Ye1、2、*, Fengzhi Wang1、2, Fang Chen2, and Yangdan Lu1
Author Affiliations
  • 1School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, Zhejiang, China
  • 2Institute of Wenzhou, Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials, Zhejiang University, Wenzhou 325006, Zhejiang, China
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    DOI: 10.3788/AOS202242.1716001 Cite this Article Set citation alerts
    Zhizhen Ye, Fengzhi Wang, Fang Chen, Yangdan Lu. Wide Band Gap Semiconductor Optoelectronic Materials and Their Applications[J]. Acta Optica Sinica, 2022, 42(17): 1716001 Copy Citation Text show less

    Abstract

    Wide band gap semiconductors have the characteristics of unique electronic structure, rich micro/nano structure, low temperature controllable preparation, flexible transparency, good chemical stability, abundant and inexpensive, etc., which make it become a new important basic material of information technology and environmental technology. Taking zinc oxide and perovskite as two wide band gap semiconductor materials, the preparation principle and method, photoelectric properties, and applications in the fields of ultraviolet light sources, transparent conductive thin films, and light-emitting diodes of the two materials are summarized. Finally, the prospect of its development is given.
    Zhizhen Ye, Fengzhi Wang, Fang Chen, Yangdan Lu. Wide Band Gap Semiconductor Optoelectronic Materials and Their Applications[J]. Acta Optica Sinica, 2022, 42(17): 1716001
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