[1] Yu P, Tang Z K, Wong G K L, et al. Room temperature stimulated emission from ZnO quantum dot films [C]. rd Int. Conf. on the Physics of Semiconductor, Singapore: World Scientific, 1996, 2: 1453-1456.
[2] Bagnall D M, Chen Y F, et al. High temperature excitonic stimulated emission from ZnO epitaxial layers [J]. Appl. Phys. Lett., 1998, 73(8): 1038-1040.
[3] Sun Jian, Wang Huitian, He Julong, et al. Ab initio investigations of optical properties of the high-pressure phases of ZnO [J]. Phys. Rev. B, 2005, 71: 125132.
[5] Segall M D, Lindan J D P, et al. First-principles simulation: ideas, illustrations and the castep code [J]. J. Phys. Cond. Matt., 2002, 14(11): 2717-2744.
[8] Serge D. High-density phases of ZnO: Structural and compressive parameters [J]. Phys. Rev. B, 1998, 58(21): 14102-14105.
[9] Karzel H, Potzel W, Kofferlein M, et al. Lattice dynamics and hyperfine interactions in ZnO and ZnSe at high external pressures [J]. Phys. Rev. B, 1996, 53(17): 11425-11438.
[10] Ahuja R, Fast L, Eriksson O, et al. Elastic and high pressure properties of ZnO [J]. J. Appl. Phys., 1998, 83(12): 8065.
[11] Zaoui A, Sekkal W. Pressure-induced softening of shear modes in wurtzite ZnO: A theoretical study [J]. Phys. Rev. B, 2002, 66(17): 174106.
[13] Kohan A F, Ceder G, Morgan D, et al. First-principles study of native point defects in ZnO [J]. Phys. Rev. B, 2000, 61(22): 15019.
[15] Erhart P, Albe K, Klein A. First-principles study of intrinsic point defects in ZnO: Role of band structure, volume relaxation, and finite-size effects [J]. Phys. Rev. B, 2006, 73(20): 205203.
[17] Hengehold R L, Almassy R J, Pedrotti F L. Electron energy-loss and ultraviolet-refletivity spectra of crystalline ZnO [J]. Phys. Rev. B, 1970, 1(12): 4784-4790.
[18] Freeouf J L. Far-ultraviolet reflectance of II-VI compounds and correlation with the Penn-Phillips gap [J]. Phys. Rev. B, 1973, 7(8): 3810-3830.